Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Chun-Jun Lin

Kuo-Hua Pan

Ta-Chun Lin

Mu-Chi Chiang

Kuan-Lin Yeh

Chen-Kuei Chung

Jhon Jhy Liaw

Chung-Chu Chen

Jhon-Jhy Liaw

Ming-Che Chen

Yi-Fang Pai

Hou-Ju Li

Yu-Chang Liang

Jyun-Yang Shen

A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

Isolation structure for isolating source/drain region structure from adjacent source/drain structure

A method for manufacturing a semiconductor device is provided. The method includes forming first and second semiconductor fins; forming first and second gate structures respectively over first regions of the first and second semiconductor fins; forming a first dummy spacer at a sidewall of the first gate structure adjacent a second region of the first semiconductor fin; etching a first source/drain recess in the second region of the first semiconductor fin; forming a n-type source/drain epitaxial structure in the first source/drain recess; forming a second dummy spacer at a sidewall of the second gate structure adjacent a second region of the second semiconductor fin, wherein the second dummy spacer has a thickness less than that of the first dummy spacer; etching a second source/drain recess in the second region of the second semiconductor fin; and forming a p-type source/drain epitaxial structure in the second source/drain recess.

Semiconductor device and manufacturing method thereof

Structures and formation methods of a semiconductor device are provided. The method includes forming a first dummy gate structure across a first fin in a first transistor region of a semiconductor substrate and a second dummy gate structure across a second fin in a second transistor region of the semiconductor substrate. The method also includes selectively introducing atomic or ionic species into the second fin on opposite sides of the second dummy gate structure and etching portions of the first and second fins, so as to form first and second recesses. Each recess is in the respective fin on a side of the respective dummy gate structure. The first recess has a different depth than the second recess. The method further includes forming first and second source/drain features in the first and second recesses, respectively.

Semiconductor device having different source/drain junction depths and fabrication method thereof

A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and over the substrate, wherein a portion of the spacer structure is between the source/drain structure and the gate stack. The method includes partially removing the outer layer, wherein a first lower portion of the outer layer remains between the source/drain structure and the gate stack. The method includes partially removing the middle layer, wherein a second lower portion of the middle layer remains between the source/drain structure and the gate stack.

Semiconductor device structure and method for forming the same

A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a gate stack over the first fin and the second fin. The method includes forming a first spacer over gate sidewalls of the gate stack and a second spacer adjacent to the second fin. The method includes partially removing the first fin and the second fin. The method includes forming a first source/drain structure and a second source/drain structure in the first trench and the second trench respectively. A first ratio of a first height of the first merged portion to a second height of a first top surface of the first source/drain structure is greater than or equal to about 0.5.

Semiconductor device structure with source/drain structure and method for forming the same

Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof

Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof

A method for fabricating a thermal inkjet head equipped with symmetrical heaters and a rapid ink refill mechanism and the head fabricated by the method are provided. The method incorporates two thick photoresist deposition processes and a nickel electroplating process. The first thick photoresist deposition process is carried out to form a primary ink chamber and an auxiliary ink chamber in fluid communication with a funnel-shaped manifold and an injector orifice. The second thick photoresist deposition process forms a mold for forming an injector passageway that leads to the injector orifice. The nickel electroplating process provides an orifice plate on top of the inkjet head through which an injector passageway that leads to the injector orifice is provided for injecting ink droplets.

Method for fabricating a thermal bubble inkjet print head with rapid ink refill mechanism and off-shooter heater

A method for fabricating a thermal inkjet head equipped with a symmetrical heater and the head fabricated by the method are provided. The method incorporates two thick photoresist deposition processes and a nickel electroplating process. The first thick photoresist deposition process is carried out to form an ink chamber in fluid communication with a funnel-shaped manifold and an injector orifice. The second thick photoresist deposition process forms a mold for forming an injector passageway that leads to the injector orifice. The nickel electroplating process provides an orifice plate on top of the inkjet head through which an injector passageway that leads to the injector orifice is provided for injecting ink droplets.

Method of fabricating a thermal inkjet head having a symmetrical heater

Integrated inkjet print head with rapid ink refill mechanism and off-shooter heater

A method for fabricating a multi-level micro-fluidic device for an micro-fluidic injection head equipped with symmetrical heaters. The method incorporates two thick photoresist deposition processes, a light-absorbing layer deposited in-between and a nickel-containing material electroplating process. The first thick photoresist deposition process is carried out to form a primary ink chamber in fluid communication with a funnel-shaped manifold and an injector orifice. The light-absorbing layer is deposited to prevent overheating of the first photoresist layer during a subsequent metal seed layer sputtering process. The second thick photoresist deposition process forms a mold for forming an injector passageway that leads to the injector orifice. The nickel-containing material electroplating process provides an orifice plate on top of the injection head through which an injector passageway that leads to the injector orifice is provided for injecting ink droplets.

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Taichung, Taiwan

Chun-Jun Lin