Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Ju Huang

Shih-Chieh Chang

Kei-Wei Chen

Chii-Ming M Wu

Huai-Tei Yang

Chin-I Liao

Chien-Wei Lee

Ying-Min Chou

Yi-Ming Huang

A FinFET including a substrate, a plurality of isolators, a gate stack, and strained material portions is provided. The substrate includes at least two fins thereon. The isolators are disposed on the substrate, and each of the insulators between the fins has a recess profile. The gate stack is disposed over portions of the fins and over the insulators. The strained material portions cover the fins revealed by the gate stack. In addition, a method for fabricating the FinFET is provided.

Fin field effect transistor and method for fabricating the same

A semiconductor structure including a semiconductor substrate is provided. The semiconductor substrate includes a surface. A gate structure is provided on the surface. An interface lower than the surface is provided. An epitaxial regrowth region adjacent the gate structure is disposed on the interface. In addition, the epitaxial regrowth region extends over the surface and includes a bottom layer and a cap layer. The activation of the cap layer is lower than that of the bottom layer. Moreover, the bottom layer is lower than the surface and the gate structure. Furthermore, the bottom layer includes a first downwardly-curved edge and a second downwardly-curved edge over the first one. The first downwardly-curved edge is connected with the second downwardly-curved edge at two endpoints. The two endpoints are in contact with the surface of the semiconductor substrate.

Epitaxy in semiconductor structure and manufacturing method thereof

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Chiayi, Taiwan

Chun-Ju Huang