United Microelectronics Corp.

Prilit Optronics, Inc.

Macronix International Co., Ltd.

Chun-Jen Weng

Biing-Seng Wu

Chao-Wen Wu

Der-Yuan Wu

Hong-Tsz Pan

Yeong-Song Yen

Lawrence Y Lin

Cedric Lee

Chia-Jui Liu

Juan-Yi Chen

Jackson Lin

Ying-Chung Tseng

Yu-Shiang Lin

Chih-Yi Cheng

A transfer system adaptable to performing levelling alignment includes a transfer head that picks up micro devices, the transfer head having a plurality of pick-up heads protruded from a bottom surface of the transfer head; and a levelling fixture configured to perform levelling alignment for the transfer head, the levelling fixture having a plurality of cavities that are concave downwards to correspondingly accommodate the pick-up heads respectively.

Transfer system and a fixture thereof adaptable to performing levelling alignment

A support structure for a light-emitting diode utilizes the configuration of a sacrifice structure to achieve safe separation of a light-emitting diode from a carrier substrate. Specifically, when an external force is applied on the light-emitting diode or the carrier substrate, a breaking layer of the sacrifice structure is the first layer to be broken, so that the light-emitting diode and carrier substrate will become separated from each other.

Support structure with sacrifice structure for light-emitting diode and manufacturing method thereof

A vacuum transfer device includes a semiconductor substrate, which has a first hole disposed in a top portion of the semiconductor substrate; a nozzle disposed in a bottom portion of the semiconductor substrate and protruding downward, the nozzle being aligned with the first hole; and a second hole disposed through the nozzle and in the semiconductor substrate to meet the first hole.

Vacuum transfer device and a method of forming the same

A method of manufacturing a spacer for a substrate having a gate structure formed thereon. The method comprises steps of forming a first oxide layer over the substrate and forming a nitride layer on the first oxide layer. A first asymmetric etching process is performed to remove a portion of the nitride layer until a portion of a top surface of the first oxide layer is exposed. A second asymmetric etching process is performed to remove a portion of the first oxide layer by using the remaining nitride layer as a mask until about 50% to 90% portion of the first oxide layer is removed. A quick wet etching process is performed to remove a portion of the remaining first oxide located on the top of the gate structure and on the substrate.

Method of manufacturing spacer

A method of forming damascene structures. A substrate including a dielectric layer thereon is provided. The dielectric layer has a plurality of via holes. A gap filler is formed into each via hole. Subsequently, a first anti-reflective coating (ARC) film and a second ARC film are consecutively formed on the dielectric layer. A photoresist pattern for defining a trench pattern is formed on the second ARC film. Following that, an etching process is performed to remove an upper part of the dielectric layer left uncovered by the photoresist pattern to form a plurality of trenches.

Method of forming damascene structures

A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.

Gap-filling process

A package with high heat dissipation, comprising a carrier and a chip located thereon, with electric connection between the chip to the carrier. A molding compound is used to encapsulate the chip, part of the carrier, and the connection between the chip and the carrier. A heat pipe is provided such that one end thereof is embedded in the molding compound, is close to the active surface of the chip and is substantially normal to the chip, and the other end thereof is extended outside of the molding compound.

Growing community of inventors

Tainan, Taiwan

Chun-Jen Weng