United Microelectronics Corp.

Chun-Jen Chen

Yu-Shu Lin

Chung-Ting Huang

Chi-Hsuan Tang

Tien-I Wu

I-Cheng Hu

Jhong-Yi Huang

Guan-Ying Wu

Kuang-Hsiu Chen

Chia-Jong Liu

Chao-Nan Chen

Kai-Hsiang Wang

Wei-Chih Chuang

Bo-Shiun Chen

Bing-Yang Jiang

Yu-Lin Cheng

Yu-Ren Wang

YI-Fan Li

Chun-Yuan Wu

Tsuo-Wen Lu

Neng-Hui Yang

Chin-Sheng Yang

Tsai-Yu Wen

Li-Wei Feng

Chin-Cheng Chien

Tien-Wei Yu

Chun-Wei Yu

Yu-Ying Lin

Yen-Hsing Chen

Tsung-Mu Yang

Ming-Hua Chang

Tien-Chen Chan

Keng-Jen Lin

Li-Chieh Hsu

Hsu Ting

Chieh-Lung Wu

A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.

Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of providing a substrate having a first region and a second region, forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, and forming a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure. Preferably, the first fin-shaped structure and the second fin-shaped structure comprise different radius of curvature and a center of curvature of the first fin-shaped structure is lower than a top surface of the STI and a center of curvature of the second fin-shaped structure is higher than the top surface of the STI.

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer adjacent to the gate structure, forming a second spacer adjacent to the first spacer, forming an epitaxial layer adjacent to the second spacer, forming a second cap layer on the epitaxial layer, and then forming a first cap layer on the second cap layer. Preferably, a top surface of the first cap layer includes a V-shape and the first cap layer and the second cap layer are made of different materials.

A transistor with strained superlattices as source/drain regions includes a substrate. A gate structure is disposed on the substrate. Two superlattices are respectively disposed at two sides of the gate structure and embedded in the substrate. The superlattices are strained. Each of the superlattices is formed by a repeated alternating stacked structure including a first epitaxial silicon germanium and a second epitaxial silicon germanium. The superlattices serve as source/drain regions of the transistor.

Transistor with strained superlattice as source/drain region

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure; forming a mask layer on the first fin-shaped structure; and performing a first anneal process so that the first fin-shaped structure and the second fin-shaped structure comprise different radius of curvature.

A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a liner on the fin-shaped structure; and removing the liner and part of the fin-shaped structure so that a sidewall of the fin-shaped structure comprises a curve. Moreover, the method includes forming an epitaxial layer around the sidewall of the fin-shaped structure while a top surface of the fin-shaped structure is exposed.

Method for fabricating a curve on sidewalls of a fin-shaped structure

A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a fin-shaped structure on a substrate, in which a sidewall of the fin-shaped structure comprises a curve. Specifically, the fin-shaped structure includes a top portion and a bottom portion, a shallow trench isolation (STI) around the bottom portion of the fin-shaped structure, and the curve includes a planar portion extending from the top surface of fin-shaped structure downward and a curved portion extending from the bottom surface of the fin-shaped structure upward.

An epitaxial structure of semiconductor device includes a substrate, a recess, a first epitaxial layer, a second epitaxial layer, and a third epitaxial layer. The recess is formed in the substrate and disposed near a surface of the substrate, wherein the recess has a recess depth. The first epitaxial layer is disposed on surfaces of a sidewall and a bottom of the recess. The second epitaxial layer is disposed on the surface of the first epitaxial layer, wherein the Ge concentration of the second epitaxial layer is greater than the Ge concentration of the first epitaxial layer. The third epitaxial layer is disposed on the surface of the second epitaxial layer, wherein the Ge concentration of the third epitaxial layer is greater than the Ge concentration of the second epitaxial layer, and the depth of the third epitaxial layer is about &#xbd; to about &#xbe; of the recess depth.

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Tainan, Taiwan

Chun-Jen Chen