Xiamen Sanan Optoelectronics Technology Co., Ltd.

Chun-I Wu

Chaoyu Wu

Ching-Shan Tao

Duxiang Wang

Yi-Jui Huang

Hongliang Lin

Junkai Huang

Wenbi Cai

Shuying Qiu

Yi-Yen Chen

A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaInAsP, 0&#x3c;X&#x3c;1 and 0&#x3c;Y&#x2264;0.05, and the barrier layer has a component formula of (AlGa)InP, 0.3&#x2264;a&#x2264;1 and 0&#x3c;b&#x3c;1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

LED for plant illumination

An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaInAsP(0&#x3c;X&#x3c;1 and 0&#x3c;Y&#x3c;1), and a barrier layer, forming a 2&#x2dc;40-pair alternating-layer structure with the strained light-emitting layer.

A warm-white-light LED structure combines a red light wafer and a blue light wafer via a bonding layer. A reflecting layer is arranged over upper and lower surfaces of the bonding layer respectively; the lower surface of the red light wafer takes up one-third or less of the upper surface of the blue light wafer, which effectively reduces packaging structure volume and time of bondings so as to optimize process flow and save fabrication cost.

Growing community of inventors

Xiamen, China

Chun-I Wu