Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Tsinghua University

Chun-Hung Wu

Liang-Yin Chen

Huicheng Chang

Chia-Cheng Chen

Su-Hao Liu

Kuo-Ju Chen

Ru-Gun Liu

Wen-Chun Huang

Hung-Chun Wang

Ping-Chieh Wu

Yee-Chia Yeo

Wen-Hao Liu

Huai-Tei Yang

Lun-Kuang Tan

Wei-Ming You

Chang-Miao Liu

Ming-Hui Chih

Feng-Ju Chang

Cheng-Kun Tsai

Ying-Lang Wang

Cheng Kun Tsai

Ching-Hsu Chang

Feng-Lung Lin

Cheng-Hsuan Huang

Ming-Hsuan Wu

Chun-Yen Chang

Chih-Kai Yang

Yu-Chang Lin

Ya Hui Chang

Yu-Tien Shen

Lin-Yu Huang

Sung-Li Wang

Shuen-Shin Liang

Po-Chin Chang

Yan-Ming Tsai

Hong-Mao Lee

Chih-Fang Huang

Tsun-Jen Chan

Jhih-Rong Huang

Cheng-Wei Lian

Ting-Fu Chang

Kuan-Kan Hu

Pinyen Lin

Yuting Cheng

Chia-Ling Chung

Chuan-Hui Shen

Keh-Yung Cheng

Yu-Li Wang

Wei-Chen Yang

Shao-Yen Chiu

Yi-Chen Li

Min-Chiang Chuang

Szu-Hsian Lee

Shun-Wu Lin

Chang-Maio Liu

Storage box

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Semiconductor device and method for manufacturing the same

Display screen with icon

A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.

Method of forming a semiconductor device

A method of forming a semiconductor device including performing an ion implantation on a substrate and etching the substrate and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a transistor on a first side of a substrate; performing an ion implantation on a second side of the substrate opposite the first side; after performing the ion implantation, etching the substrate to remove the substrate and form a first recess; and forming a dielectric layer in the first recess.

Semiconductor devices including backside power rails and methods of manufacture

A method includes depositing a multi-layer stack over a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a first recess in the multi-layer stack; forming first spacers on sidewalls of the sacrificial layers in the first recess; depositing a first semiconductor material in the first recess, where the first semiconductor material is undoped, where the first semiconductor material is in physical contact with a sidewall and a bottom surface of at least one of the first spacers; implanting dopants in the first semiconductor material, where after implanting dopants the first semiconductor material has a gradient-doped profile; and forming an epitaxial source/drain region in the first recess over the first semiconductor material, where a material of the epitaxial source/drain region is different from the first semiconductor material.

Semiconductor device and method of manufacture

A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.

A method of forming a semiconductor device includes forming a photoresist over a target layer, where the target layer includes a substrate. The photoresist is patterned to form a patterned photoresist. Scum remains between portions of the patterned photoresist. The substrate is tilted relative to a direction of propagation of an ion beam. An ion treatment is performed on the scum. A pattern of the patterned photoresist is transferred to the target layer.

Semiconductor structure and method of forming the same

Rack

The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

Doping for semiconductor device with conductive feature

Container

An electronic device includes a device body and a female terminal structure connected to the device body. The female terminal structure includes a female terminal body, a tunnel, a second terminal member, and a secured terminal member. The female terminal body is connected to the device body and a mating electronic device, respectively. The tunnel is recessed from the female terminal body. The second terminal member is disposed at the female terminal body and received in the tunnel. The second terminal member has a terminal inserting portion. The secured terminal member is disposed at the female terminal body, spaced from the second terminal member, and disposed on an outer periphery of the extension portion. The extension portion is substantially flushed with the secured terminal member. The second terminal member is not flushed with the extension portion. The second terminal member is enclosed by the extension portion.

Electronic device

A seat pad includes a supporting device, a shaping positioning portion, and an elastic member. The supporting device has a receiving space. The shaping positioning portion is at the outer periphery of the receiving space. The elastic member is arranged in the receiving space of the supporting device. The elastic member includes a contact surface in the shaping positioning portion, and the contact surface can be seated by a buttock of a user to hold the buttock of the user.

Seat pad

Growing community of inventors

Taipei, Taiwan

Chun-Hung Wu