Epistar Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Industrial Technology Research Institute

Hon Hai Precision Industry Co., Ltd.

National Taiwan University

Other

Wistron Neweb Corporation

Lextar Electronics Corporation

Yenrich Technology Corporation

Chun-Hung Liu

Ming-Chi Hsu

Shih-An Liao

Min-Hsun Hsieh

Liang-Wei Huang

Shih-Ming Chang

Chiu-Lin Yao

Been-Yu Liaw

Wei-Chiang Hu

Shau-Yi Chen

Wen Lo

Yu-His Sung

Po-Hung Lai

Chien-Liang Liu

Chien-Chih Chen

Shieh-Hsing Kuo

Chien-Cheng Chen

Chia-Hua Chang

Hsin-Wei Wu

Ta-Wei Ou

Zhi-Ting Ye

Ching-Tai Cheng

Yih-Hua Renn

Lung-Kuan Lai

Kuen-Yu Tsai

Chien-Rong Huang

Chih-Chun Feng

Yung-Hua Hung

Po-Chang Chen

Sheng-Che Chiou

Yu Chen Liao

Chih-Yi Lai

Cheng-Teng Ye

Cheng-Han Lee

Yi-Wei Chiu

Chia-Ming Chang

Chih-Teng Liao

Kai-Wen Cheng

Chun-Yi Chang

Tzu-Chan Weng

Hsuan-Ting Ho

Ming-Yue Chen

Chi-Shun Weng

Ching-Yao Su

Chao-Kai Cheng

Sheng-Fu Chuang

Hung-Hsiu Yu

Ming-Feng Hsu

Yu-Li Lin

Yu-Lun Ho

Jen-Chieh Yu

Li-Han Liang

Shang-Jung Hsieh

Chia-Tsung Tso

Chih-Jian Lin

Mao-Feng Tu

Chun-Wei Chen

Chih-Hsuan Chiu

Sheng-Ping Chen

Kuo-Shih Tseng

Kun-Cheng Chen

Wen-Yo Lee

Patrick Chen

Tsung-Hau Shiu

Chi-Cheng Cheng

Kuo-Liang Huang

Enzo Kuo

Yuan-Chich Lin

Jou Chyn

Shao-Kung Chang

Chien-Hsing Lin

Chen Yung-Chan

Hsiao-Ming Huang

Kuo-Chih Ho

Wen-Jen Cho

Philip C W Ng

Pei-Lin Tien

Zhi-ting Ye

A method includes generating an electron beam from a radiation source; modifying an energy distribution of the electron beam through a first shaping aperture; and exposing a substrate to portions of the electron beam passing through the first shaping aperture. The first shaping aperture comprises blocking strips with a plurality of slots therebetween, a frame surrounding the blocking strips, and a diagonal support connected to the frame and one of the blocking strips.

Semiconductor apparatus and method of operating the same

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

Semiconductor device and a method of manufacturing thereof

An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Dummy insertion for improving throughput of electron beam lithography

Light-emitting device

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

Light emitting bulb

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter.

A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stacking structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface; and a conductive connecting layer comprising a first conducting part, comprising a first outer boundary, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conducting part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conducting part.

A light-emitting device includes a light-emitting structure with a side surface, and a reflective layer covering the side surface. The light-emitting structure has a first light-emitting angle and a second light-emitting angle. The difference between the first light-emitting angle and the second light-emitting angle is larger than 15&#xb0;.

Light-emitting device having dissimilar first and second light-emitting angles

Growing community of inventors

Hsinchu, Taiwan

Chun-Hung Liu