Winbond Electronics Corporation

Ideal Bike Corporation

Ateq Instruments (asia) Pte Ltd

Chun-Hung Lin

Yen-Jui Chu

Kao-Tsair Tsai

Hsin-Hung Chou

Yao-Ting Tsai

Jin-Neng Wu

Ching-Chun Huang

Chung-Hsien Liu

Tz-Hau Guo

Chien-Hsien Wu

Chung-Chen Hsu

Yuan-Chih Cheng

A manufacturing method for a semiconductor structure is provided. First active areas, a second active area, and a third active area are formed. A first dielectric layer is formed on the active areas. A patterned region that includes a cavity region and a dielectric region is formed in the first dielectric layer, and the cavity region surrounds the dielectric region. A filling layer is formed in the cavity region. Multiple first contact holes and at least one second contact hole that penetrate the first dielectric layer are formed. Each first contact hole exposes a portion of the corresponding first active area, and the second contact hole replaces the dielectric region and exposes a portion of the second active area. Metal layers are filled in to the first contact holes and the second contact hole.

Semiconductor structure and manufacturing method of the same

A method for manufacturing a non-volatile memory device is provided. The method includes forming a trench through a sacrificial layer and extending into a substrate, filling a first insulating material into the trench, and implanting a dopant in the first insulating material by an implantation process. Then, the first insulating material is partially removed to form a first recess between the sacrificial layers. The lowest point of the first recess is lower than the top surface of the substrate. The method includes filling a second insulating material in the first recess and removing the sacrificial layer to form a second recess adjacent to the second insulating material. The method includes forming a first polycrystalline silicon layer in the second recess, and sequentially forming a dielectric layer and a second polycrystalline silicon layer on the first polycrystalline silicon layer.

Method for manufacturing non-volatile memory device

TPMS tool

A package structure including a lead frame structure, a die, an adhesive layer, and at least one three-dimensional (3D) printing conductive wire is provided. The lead frame structure includes a carrier and a lead frame. The carrier has a recess. The lead frame is disposed on the carrier. The die is disposed in the recess. The die includes at least one pad. The adhesive layer is disposed between a bottom surface of the die and the carrier and between a sidewall of the die and the carrier. The 3D printing conductive wire is disposed on the lead frame, the adhesive layer, and the pad, and is electrically connected between the lead frame and the pad.

Package structure and manufacturing method thereof

A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.

Methods for forming a photo-mask and a semiconductor device

Provided is a redistribution layer (RDL) structure including a substrate, a pad, a dielectric layer, a self-aligned structure, a conductive layer, and a conductive connector. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The self-aligned structure is disposed on the dielectric layer. The conductive layer extends from the pad to conformally cover a surface of the self-aligned structure. The conductive connector is disposed on the self-aligned structure. A method of manufacturing the RDL structure is also provided.

Redistribution layer (RDL) structure and method of manufacturing the same

A semiconductor device is provided and includes a first pad and a second pad, a first conductive connector and a second conductive connector, a first conductive structure and a second conductive structure. The first conductive connector and the second conductive connector are disposed over the first pad and the second pad. The first conductive structure is electrically connected to the first pad and the first conductive connector, and includes a first portion, a second portion and a connecting portion connecting the first and second portions. The first portion and the second portion are not overlapped in a vertical direction, and the first portion, the connecting portion and the second portion are integrally formed. The second conductive structure is electrically connected to the second pad and the second conductive connector, wherein a portion of the second conductive structure is overlapped with the first conductive structure therebeneath in the vertical direction.

Semiconductor device including conductive structure

A bicycle frame includes a front part and a rear part. The front part includes head tube, a seat tube and a down tube connected between the head tube and the seat tube. A first connection portion is connected to the conjunction portion of the seat tube and the down tube. The rear part includes a second connection portion, a connection plate extending from a top end of the second connection portion, and two chain stays and two seat stays extending from the connection plate. The connection plate is fixed to the seat tube by at least one bolt, and the first and second connection portions are connected to each other by at least two bolts. The first connection portion includes a ridge which is engaged with the groove defined in the second connection portion.

Bicycle frame

A tube connection assembly of a bicycle frame includes a bi-forked portion formed by a hollow rectangular tube; one end of the rectangular tube being bi-forked as two halves; each half having a positioning groove; and a combining portion formed by two plates which are connected as a shape corresponding to that of the positioning groove and the bi-forked portion so that in assembly the combining portion is assembled to the bi-forked portion; and connection area of the bi-forked portion and combining portion being welded.

Growing community of inventors

Taichung, Taiwan

Chun-Hung Lin