Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

Wistron Neweb Corporation

Chun-Hung Huang

Jyh-Huei Chen

Tzu-Hsin Kuo

Yi-Chieh Lin

Li-Han Hsu

Lan-Chun Yang

Heng-Sheng Chou

Jinn-Fa Wu

Kuo-Yu Tang

Dong-Jou Shien

Chii-Horng Li

Wei-Yuan Lu

Hsin-Che Chiang

Yao-Jen Hsieh

Yu-Hsien Lin

Jeng-Ya David Yeh

Ming-Yi Lin

Lilly Su

Yu-Chieh Chen

Pang-Chiang Chia

Wen-Hsin Hsieh

Jyh-Jone Lee

Jie-Len Huang

Chang-Chia Hsieh

Chih-Chieh Lin

Chia-Chun Chen

Chyi-Liou Lin

Shang-Chi Lin

Tsang-Fang Jeng

Kuo-Hsiung Lin

Yen-Chia Peng

Ming-Lang Chang

Yung-Hsian Lai

Lin-Chan Tsai

Tong-Jou Shien

Cho-Chun Chiu

Yong-Dar Chen

Cheng-Chang Ling

Ying-Chi Wang

Jinq-Yu Jiang

Hung-Ju Su

A method of forming a semiconductor device structure is provided. The method includes forming semiconductor fins at a first conductivity type region and a second conductivity type region of a substrate, forming a sacrificial gate structure across a portion of the semiconductor fins, wherein the sacrificial gate structure comprises a sacrificial gate dielectric layer and a sacrificial gate electrode layer over the sacrificial gate dielectric layer, and the sacrificial gate dielectric layer on the semiconductor fins of the first conductivity type region is asymmetrical in thickness between a top and a sidewall of the semiconductor fins. The method also includes forming a gate spacer on opposite sidewalls of the sacrificial gate structure, recessing the semiconductor fins not covered by the sacrificial gate structure and the gate spacer, forming source/drain feature on the recessed semiconductor fins, and removing the sacrificial gate structure to expose the top of the semiconductor fins.

Semiconductor device structure and methods of forming the same

A communication apparatus and a bracket device thereof are provided. The bracket device includes a base, a rotary shaft, a connecting member, and an elastic member. The base includes a bottom portion, a connecting portion, and a base engaging portion. The rotary shaft is rotatably disposed in the connecting portion and includes a base wall and a connecting section. The connecting member connects to the rotary shaft. The elastic member includes a body and an elastic member engaging portion. The body connects to the base wall of the rotary shaft, and the elastic member engaging portion is positioned at the body. In an engagement state, the elastic member engaging portion is engaged to the base engaging portion.

Communication apparatus and bracket device thereof

An orientation-adjustment mechanism is provided, which is adapted to be affixed to a mounting surface. The orientation-adjustment mechanism includes a base, a rod, a joint unit, and a mounted member. The base is adapted to be affixed to the mounting surface. The rod includes a first section and a second section. The first section of the rod pivots on the base. The joint unit is disposed on the second section of the rod. The joint unit includes a plurality of joint-positioning portions. The joint-positioning portions include a first joint-positioning portion and a second joint-positioning portion. The mounted member is connected to the joint unit and is adapted to be rotated relative to the joint unit. The mounted member includes a member housing. The member housing includes at least one member-positioning portion.

Orientation-adjustment mechanism

Integrated circuit devices with field effect transistors have source and drain regions that include a first and a second layer. The first layer is formed below the plane of the channel region. The first layer includes doped silicon and carbon that has a crystal lattice structure that is smaller than that of silicon. The second layer is formed over the first layer and rises above the plane of the channel region. The second layer is formed by a material that includes doped epitaxially grown silicon. The second layer has an atomic fraction of carbon less than half that of the first layer. The first layer is formed to a depth at least 10 nm below the surface of the channel region. This structure facilitates the formation of source and drain extension areas that form very shallow junctions. The devices provide sources and drains that have low resistance while being comparatively resistant to short channel effects.

Engineered source/drain region for n-Type MOSFET

An integrated circuit device and method for manufacturing an integrated circuit device is disclosed. The integrated circuit device comprises a core device and an input/output circuit. Each of the core device and input/output circuit includes a PMOS structure and an NMOS structure. Each of the PMOS includes a p-type metallic work function layer over a high-k dielectric layer, and each of the NMOS structure includes an n-type metallic work function layer over a high-k dielectric layer. There is an oxide layer under the high-k dielectric layer in the input/output circuit.

Fabrication methods of integrated semiconductor structure

A two-stage differential cycloidal speed reducer with a high reduction ratio is provided, including: a plurality of supporting crank shafts; an input shaft including a first crank shaft portion and a second crank shaft portion; a first cycloidal gear provided on the first crank shaft portion; a second cycloidal gear provided on the second crank shaft portion and connected with the first cycloidal gear through the supporting crank shafts; a plurality of first ring pins provided around the outer circumference of the first cycloidal gear and in sliding contact with a plurality of teeth on the periphery of the first cycloidal gear; a first annular gear with the plurality of first ring pins; a plurality of second ring pins provided around the outer circumference of the second cycloidal gear and being in sliding contact with a plurality of teeth on the periphery of the second cycloidal gear; and a second annular gear with the plurality of second ring pins.

Two-stage differential cycloidal speed reducer with a high reduction ratio

A module for on-line vibration detection and adjustment and machining center using the same are provided in the present invention, wherein the module is disposed at the machining center having an interface of feedrate override and an interface of spindle override and the inverter. The module comprises at least one vibration sensor for detecting the vibrating status of the machining center, thereby generating corresponding at least one sensing signal and a processor for processing the at least one sensing signal so as to generate a spindle adjusting signal for the interface of spindle override and the inverter and a feedrate adjusting signal for the interface of the federate override. The computer numerical controller receives the spindle adjusting signal and the feedrate adjusting signal from the interface of the spindle override and federate override respectively and accordingly controls the feedrate and spindle rate of the machining center.

Module for on-line vibration detection and adjustment and machining center using the same

A method includes forming a polysilicon layer over a substrate, forming a hard mask over the polysilicon layer, and doping a first portion of the hard mask with a dopant to form a doped hard mask region, wherein a second portion of the hard mask is not doped with the dopant. An etching step is performed to etch the first and the second portions of the hard mask, wherein the second portion of the hard mask is removed, and wherein at least a bottom portion of the doped hard mask region is not removed. After the etching step, the bottom portion of the doped hard mask region is removed. Electrical connections are formed to connect to a portion of the polysilicon layer in order to form a resistor.

Polysilicon resistor formation in a gate-last process

An over-driving device is provided. In a first frame, a compression circuit compresses a first image signal to generate a first compression image signal, and a buffer temporarily stores the first compression image signal. In a following second frame, the compression circuit compresses a second image signal to generate a second compression image signal, and the buffer outputs the first compression image signal to serve as a first buffer image signal. A comparison circuit compares the second compression image signal and the first buffer image signal and generates an enable signal according comparison result. A decompression circuit decompresses the first buffer image signal to generate a previous image signal. An over-driving unit receives the second image signal to serve to a current image signal and receives the previous image signal and the enable signal. The over-driving unit over drives the display device or not according to the enable signal.

Over-driving device

A driver for driving a display panel and a method for reading/writing in a memory thereof and thin film transistor liquid crystal display (TFT-LCD) using the same are provided. The method of the present invention is a reading timing of memory which different than the prior reading timing of memory, so that, if using the method of the present invention in the driver even having only one memory, the tearing effect of the prior TFT-LCD can be solved and the whole power consumption thereof can also be reduced.

Driver for driving display panel and method for reading/writing in memory thereof and thin film transistor liquid crystal display using the same

A machine tool spindle structure capable of monitoring a working state in real time includes a spindle body, a rotating mandrel, a cutter base, and an internal inspecting device. The cutter base is combined with the rotating mandrel and rotates with the rotating mandrel. The rotating mandrel has a chamber, and the internal inspecting device is disposed in the chamber. Inspecting chips in the internal inspecting device are directly disposed on the cutter base, so as to measure working parameters during a processing process. The working parameters are transmitted to an external information device by a wireless transmission module in the internal inspecting device, thereby accurately giving a feedback of the working state of a processing cutter in real time.

Machine tool spindle structure capable of monitoring working state in real time

An automated microarray processing system includes a microarray housing assembly module, an incubation module, a washing module and at least one automated transport module. With the automated transport module being mechanically moved among the microarray housing assembly module, the incubation module and the washing module, biochemical reaction of a reaction region of a microarray and a biological sample solution disposed therebetween is automatically performed, and the reacted microarray is automatically cleaned when the biochemical reaction of the microarray is completed.

Fully automated microarray processing system

A spindle used in an ultrasonic machine for transmitting vibration to a working tool of the ultrasonic machine is disclosed. The spindle includes a main body, a rotor disposed in the main body, an elastic clamping unit disposed in the rotor, a vibrating unit having one end thereof connected to the inner wall of the rotor while the other end connected to the elastic clamping unit, and a pre-pressure unit penetrating the rotor and one end thereof connected to the elastic clamping unit to provide the elastic clamping unit with rigidity against the rotor, thereby making the elastic clamping unit provide pre-pressure to the vibrating unit which further provides the elastic clamping unit with vibration against the rotor. The present invention further provides a flexible hinge for the spindle.

Spindle and flexible hinge used in ultrasonic machine

A protection gas control method for a non-sealed process chamber including the steps of activating a protection gas control apparatus while coupling a protection gas to a plurality of throttle valves, opening all the throttle valves for a pre-determined period of time, closing at least one of the throttle valves if the oxygen concentration in the chamber is smaller than or equal to a first target value, determining whether the oxygen concentration in the chamber is smaller than or equal to a second target value, and stopping supplying the protection gas when the temperature of the chamber is lower than a pre-determined temperature.

Protection gas control method for non-sealed process chamber

A preloading bearing unit mounted in a casing to support an antifriction bearing and the output shaft of a motor, the preloading bearing unit including a bushing mounted on the antifriction bearing, and a hydraulic cylinder assembly controlled to display the bushing, the hydraulic cylinder assembly including first and second miniature hydraulic cylinders alternatively arranged around the bushing, the first and second miniature hydraulic cylinders each having a spring stopped against the bushing, first and second hydraulic fluid delivery pipes connected to the miniature hydraulic cylinders, first and second accumulation chambers for guiding a hydraulic fluid to the first miniature hydraulic cylinders and the miniature hydraulic cylinders respectively. A difference preloading pressure is given to the bushing by turning on the first miniature hydraulic cylinders, the second miniature hydraulic cylinders, or both the first and second miniature hydraulic cylinders.

Preloading bearing unit

Growing community of inventors

Hsinchu, Taiwan

Chun-Hung Huang