Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Hui Yu

Kuo-Chung Yee

Chen-Hua Douglas Yu

Jeng-Nan Hung

Po-Fan Lin

Ming-Da Cheng

Ching-Hua Hsieh

Wei-Hung Lin

Yi-Da Tsai

Sao-Ling Chiu

Ping-Kang Huang

Cheng-Yen Hsieh

Liang-Ju Yen

Yi-Jhang Wang

A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.

Semiconductor device

A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die.

Semiconductor packages and methods of forming the same

A package structure includes a wafer-form semiconductor package and a thermal dissipating system. The wafer-form semiconductor package includes semiconductor dies electrically connected with each other. The thermal dissipating system is located on and thermally coupled to the wafer-form semiconductor package, where the thermal dissipating system has a hollow structure with a fluidic space, and the fluidic space includes a ceiling and a floor. The thermal dissipating system includes at least one inlet opening, at least one outlet opening and a plurality of first microstructures. The at least one inlet opening and the at least one outlet opening are spatially communicated with the fluidic space. The first microstructures are located on the floor, and at least one of the first microstructures is corresponding to the at least one outlet opening.

Package structure and manufacturing method thereof

A package structure is provided. The package structure includes a die, an encapsulant and a RDL structure. The RDL structure is disposed on the die and the encapsulant. The RDL structure includes a first dielectric structure and a first redistribution layer. The first dielectric structure includes a first dielectric material layer and a second dielectric material layer on the first dielectric material layer. The first redistribution layer is embedded in the first dielectric structure and electrically connected to the die. The redistribution layer includes a first seed layer and a first conductive layer surrounded by the first seed layer. A topmost surface of the first seed layer and a topmost surface of the first conductive layer are substantially level with a top surface of the second dielectric material layer.

Package structure

A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.

Semiconductor structure including thermal enhanced bonding structure

A semiconductor package includes a first die, a first heat conduction block and a first encapsulant. The first die has a bottom surface, a top surface and a sidewall between the bottom surface and the top surface. The first heat conduction block has a bottom surface, a top surface and a sidewall between the bottom surface and the top surface. The first encapsulant is disposed between the sidewall of the first die and the sidewall of the first heat conduction block.

3D semiconductor packages

Provided is a package including: a die having an upper surface and including at least one conductive pad disposed adjacent to the upper surface; a first pillar structure over the die; and a second pillar structure aside the first pillar structure, wherein the second pillar structure is electrically connected to the conductive pad of the die, and defining a recess portion recessed from a side surface of the second pillar structure, wherein the second pillar structure and the conductive pad have different conductivities.

Package having redistribution layer structure with protective layer

Provided is a method of fabricating a package including: providing a die with a contact thereon; forming a redistribution layer (RDL) structure on the die, the forming the RDL structure on the die comprising: forming a first dielectric material on the die; forming a conductive feature in and partially on the first dielectric material; after the forming the conductive feature, forming a protective layer on the conductive feature, wherein the protective layer covers a top surface of the conductive feature and extends to cover a top surface of the first dielectric material; forming a second dielectric material on the protective layer; and performing a planarization process to expose the conductive feature; and forming a plurality of conductive connectors to electrically connect the die through the RDL structure.

Package having redistribution layer structure with protective layer and method of fabricating the same

A semiconductor package includes a chip, a redistribution structure, and first under-ball metallurgies patterns. The chip includes conductive posts exposed at an active surface. The redistribution structure is disposed on the active surface. The redistribution structure includes a first dielectric layer, a topmost metallization layer, and a second dielectric layer. The first dielectric layer includes first openings exposing the conductive posts of the chip. The topmost metallization layer is disposed over the first dielectric layer and is electrically connected to the conductive posts. The topmost metallization layer comprises first contact pads and routing traces connected to the first contact pads. The second dielectric layer is disposed on the topmost metallization layer and includes second openings exposing the first contact pads. The first under-ball metallurgies patterns are disposed on the first contact pads, extending on and contacting sidewalls and top surfaces of the first contact pads.

Semiconductor package and manufacturing method thereof

A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant and a RDL structure, the encapsulant encapsulate sidewalls of the die. The RDL structure is disposed on the die and the encapsulant. The RDL structure includes a first dielectric structure and a first redistribution layer. The first dielectric structure includes a first dielectric material layer and a second dielectric material layer on the first dielectric material layer. The first redistribution layer is embedded in the first dielectric structure and electrically connected to the die, the redistribution layer comprises a first seed layer and a first conductive layer disposed on the first seed layer. A topmost surface of the first seed layer and a topmost surface of the first conductive layer are substantially level with a top surface of the second dielectric material layer.

Package structure and method of forming the same

Semiconductor structure

A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.

A semiconductor package structure includes a plurality of first dies spaced from each other, a molding layer between the first dies, a second die over the plurality of first dies and the molding layer, and an adhesive layer between the plurality of first dies and the second die, and between the molding layer and the second die. A first interface between the adhesive layer and the molding layer and a second interface between the adhesive layer and the plurality of first dies are at different levels.

Growing community of inventors

Hsinchu County, Taiwan

Chun-Hui Yu