Winbond Electronics Corporation

Chun-Hsu Chen

Lu-Ping Chiang

Chung-Hsien Liu

Tzu-Yun Huang

Hsu-Chi Cho

A non-volatile memory structure includes a substrate and a gate stack layer over the substrate. The gate stack layer includes an active pattern and a rail block. The active pattern includes several first active stacks and several second active stacks. The first active stacks and the second active stacks are arranged separately in the first direction, and they extend in the second direction. The second direction is different from the first direction. The rail block extends in the first direction. The rail block has a first side and a second side. The second side is opposite the first side. The first active stacks connect the first side of the rail block. The second active stacks connect the second side of the rail block. Also, the first side of the rail block includes several first protruding portions arranged separately in the first direction.

Non-volatile memory structure and method for forming the same

A method of manufacturing a memory structure including the following steps is provided. Stacked structures are formed on a substrate, and each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structure, and the first opening extends into the substrate. At least one isolation structure is formed in the first opening. The isolation structure covers a sidewall of the first dielectric layer. The isolation structure has a recess therein, such that a top profile of the isolation structure is shaped as a funnel. A second dielectric layer is formed on the stacked structures. A second conductive layer is formed on the second dielectric layer and fills the first opening.

Method of manufacturing memory structure

Provided is a method of manufacturing a memory device including following steps. A substrate including an active region and a periphery region. A stack layer is formed on the substrate. A first trench is formed in the substrate and the stack layer in the active region. A first isolation structure is formed in the first trench. An ion implantation process is performed to form a doped first isolation structure. A first wet etching process is performed to remove a portion of the doped first isolation structure, so that a first recess is formed on the doped first isolation structure. A protection layer is formed on the substrate to at least cover sidewalls of the first recess. A second wet etching process is performed to remove the protection layer and another portion of the doped first isolation structure and deepen the first recess. A SICONI etching process is performed.

Method of manufacturing memory device

A manufacturing method of a semiconductor device includes the following steps. A first conductive layer, a first oxide layer, and a hardmask layer are sequentially formed on a substrate. The hardmask layer and the first oxide layer are patterned to form a stacking structure including a hardmask pattern and a first oxide pattern. An oxidation process is performed, such that a second oxide layer is formed on surfaces of the stacking structure and the first conductive layer, and a region of the first conductive layer adjacent to a sidewall of the stacking structure are oxidized to form an extending oxide pattern. The second oxide layer is removed. The stacking structure is applied as a mask to remove an exposed portion of the first conductive layer and the substrate therebelow, such that a first conductive structure and a recess in the substrate are formed. The stacking structure is removed. The extending oxide pattern is removed.

Manufacturing method of semiconductor device

A memory structure including a substrate, stacked structures, at least one isolation structure, a second conductive layer, and a second dielectric layer is provided. The stacked structures are disposed on the substrate. Each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structures, and the first opening extends into the substrate. The isolation structure is disposed in the first opening and covers a sidewall of the first dielectric layer. The isolation structure has a recess, such that a top profile of the isolation structure is shaped as a funnel. The second conductive layer is disposed on the stacked structures and fills the first opening. The second dielectric layer is disposed between the second conductive layer and the first conductive layer.

Memory structure

A method of manufacturing a memory device including following steps is provided. A first dielectric layer and a first conductive layer are formed in order on the substrate. A first opening and a second opening on the first opening are formed in the substrate, the first dielectric layer and the first conductive layer. An isolation structure is formed in the first opening. A second dielectric layer is formed on the substrate to conformally cover a top surface of the first conductive layer and a surface of the second opening. A heat treatment is performed on the second dielectric layer to enhance the bonding between the second dielectric layer and the first conductive layer. An etching process is performed, so as to remove a portion of the second dielectric layer and expose a top surface of the isolation structure.

A method for fabricating a memory device is provided. In the method, a first gate dielectric layer is formed on a substrate in a first region. A second gate dielectric layer is formed on the substrate in a second region and a third region. A first conductive layer is formed on the substrate. A first dielectric layer is directly formed on the first conductive layer. One portion of the first dielectric layer, one portion of the first conductive layer, and one portion of the second gate dielectric layer in the second region are removed. A third gate dielectric layer and a second conductive layer are formed sequentially on the substrate in the second region. A third conductive layer and a second dielectric layer are formed sequentially on the substrate. Isolation structures are formed in the substrate. Here, the isolation structures penetrate the second dielectric layer and extend into the substrate.

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Taichung, Taiwan

Chun-Hsu Chen