United Microelectronics Corp.

Chun-Hsiung Peng

Wei-Lun Hsu

Te-Yuan Wu

Chih-Jen Huang

Ching-Ming Lee

Chao-Yuan Su

A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.

Growing community of inventors

Tao-Yuan, Taiwan

Chun-Hsiung Peng