Epistar Corporation

Chun-Hsiang Tu

De-Shan Kuo

Po-Shun Chiu

Ting-Chia Ko

Wei-Chih Wen

Sen-Jung Hsu

Tao-Chi Chang

Ou Chen

Yen-Tai Chao

Yu-Shou Wang

Jing-Feng Huang

Chun-Teng Ko

Tsun-Kai Ko

Chia-Liang Hsu

Chen Ou

Hui-Chun Yeh

Chien-Kai Chung

Min-Yen Tsai

Min-Hsun Hsieh

Hsin-Ying Wang

Yu-Ting Huang

Chi-Shiang Hsu

Victor Liu

Juin-Yang Chen

A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

Light-emitting device and manufacturing method thereof

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Electrode structure of light emitting device

A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle &#x3b1; between thereof.

A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle &#x3b1; between thereof, 30&#xb0;&#x2264;&#x3b1;&#x2264;80&#xb0;.

A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle &#x3b1; between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

Light emitting device

A light-emitting device including a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion; a second semiconductor stack including a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle &#x3b1; between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle &#x3b2; between thereof; and wherein the roughed surface is connected to the top surface.

A light-emitting device is provided. The light-emitting device comprises a substrate; a semiconductor stack on the substrate comprising a first region and a second region; a first trench extending from the semiconductor stack to the substrate to expose a surface of the substrate and separating the first region from the second region; and a first electrode comprising a first pad on the first region and a first extending electrode connecting to the first pad, wherein the first extending electrode is across the first trench.

Light-emitting device and method of manufacturing thereof

A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle &#x3b1; between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle &#x3b2; between thereof.

A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

Light emitting diode structure

A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.

Growing community of inventors

Hsinchu, Taiwan

Chun-Hsiang Tu