United Microelectronics Corp.

Chun-Han Chuang

Hui-Shen Shih

Chih-Jen Mao

Kuo-Wei Yang

Chun-Hung Hsia

Ta-Ching Yang

Chun-Cheng Yu

Chien-Fu Chu

A method of cleaning a reaction chamber having a wafer holder is provided. First, the reaction chamber is cleaned by a cleaning gas. Next, a protection film is formed on the inner surface of the reaction chamber, wherein a gap is formed between the protection wafer and the wafer holder, and a cooling gas is guided therebetween simultaneously.

Method of cleaning reaction chamber, method of forming protection film and protection wafer

The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.

Method for manufacturing semiconductor device that includes baking a dielectric layer after exposure to plasma

A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.

Method of preventing a peeling issue of a high stressed thin film

Growing community of inventors

Hsinchu, Taiwan

Chun-Han Chuang