Samsung Electronics Co., Ltd.

Chun-geun Park

Sang-jun Choi

Young-bum Koh

Jong-han Park

Seon-ho Ha

Hai-won Lee

Terpolymer for amplified resist

Chemically amplified resist compositions

Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula:

Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

Chemically amplified resist polymers

In general, the invention provides polymers which may be used in chemically amplified resists. More particularly, the invention relates to esterified polymers containing the group: ##STR1## Resist compositions comprise the esterified polymers and photoacid generators.

Chemically amplified resists

Resins for use in chemically amplified resists are represented by the general formula (I): ##STR1## wherein R.sub.1 is t-butyl or tetrahydropyranyl; R.sub.2 is hydrogen or methyl; n and m are integers; and the ratio n/((m+n) ranges from 0.1 to 0.9. Methods for manufacturing the resins comprise reacting a monomer represented by the formula (II): ##STR2## with a monomer represented by the formula (III): ##STR3## to form a copolymer represented by the formula (IV): ##STR4## wherein R.sub.1 and R.sub.2 are defined as above; and hydrolyzing acetoxy groups contained in the copolymer represented by the formula (IV) to form the resin compositions.

Resins for use in chemically amplified resists and manufacturing methods

Photosensitive polymers are represented by the formula: ##STR1## wherein R1 is selected from the group consisting of hydrogen and methyl; R2 is selected from the group consisting of aliphatic hydrocarbon groups having from 6 to 20 carbon atoms; R3 is selected from the group consisting of a t-butyl group and a tetrahydropyranyl group, and m and n are selected such that the ratio m/(n+m) ranges from 0.1 to 0.9. Photoresist compositions comprise the photosensitive polymers and photoacid generators.

Photosensitive polymers and photoresist compositions containing the same

A resist composition by which high resolution patterns can be formed in a lithography process, due to its high sensitivity to light and large difference in solubilities in a developing solution before and after exposure to light, and which has excellent thermal characteristics. The resist composition is suitable for manufacturing highly integrated semiconductor chips.

Resist compositions for chemically amplified resists comprising a

A method for manufacturing a bump on a semiconductor comprising the steps of: forming metal pad on a portion of a surface of a substrate, forming a barrier metal layer over the surface of the substrate such that the barrier metal layer cover the metal pad, forming a photoresist layer over the barrier metal layer, forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad, forming a chip bump in the opening, selectively removing the photoresist layer using the bump as a mask, such that residual portions of the photoresist layer remain, and such that portions of the barrier metal layer are exposed, etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask, and removing the residual photoresist layer.

Growing community of inventors

Kyungki-do, South Korea

Chun-geun Park