Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Fu Cheng

Zhiqiang Wu

Chung-Wei Wu

Wei Ju Lee

Kuan-Lun Cheng

Yi-Ming Sheu

Meng-Yu Lin

Hou-Yu Chen

Yi-Bo Liao

Meng-Han Lin

Han-Jong Chia

Yu-Xuan Huang

Cheng-Ting Chung

Tzer-Min Shen

Yi-Han Wang

Yu-Chien Chiu

Hong-Shen Chen

Ching-Wei Tsai

Feng-Cheng Yang

Yu-Lien Huang

Sheng-Chen Wang

Ka-Hing Fung

Chung-Cheng Wu

Kuang-Yuan Hsu

Tsung-Hsing Yu

Chien-Tai Chan

Chih-Pin Tsao

Hsien-Chin Lin

Chia-Wen Liu

Chih-Ching Wang

Shih-Syuan Huang

Wen-Yuan Chen

Han-Pin Chung

Shin-Jiun Kuang

Hung-Kai Chen

Tsung-Hung Lee

Zhi-Qiang Wu

Jiann-Tyng Tzeng

Zhi-Chang Lin

Charles Chew-Yuen Young

Kam-Tou Sio

Chun-Hsiang Fan

Kuan-lun Cheng

Kuo-An Liu

Kai Tak Lam

Wei-Ju Lee

Chieh-Chun Chiang

A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate and laterally separated from the first semiconductor channel. A gate structure covers and wraps around the first semiconductor channel and the second semiconductor channel. A first source/drain region abuts the first semiconductor channel on a first side of the gate structure, and a second source/drain region abuts the second semiconductor channel on the first side of the gate structure. An isolation structure is under and between the first source/drain region and the second source/drain region, and includes a first isolation region in contact with bottom surfaces of the first and second source/drain regions, and a second isolation region in contact with sidewalls of the first and second source/drain regions, and extending from a bottom surface of the first isolation region to upper surfaces of the first and second source/drain regions.

Field effect transistor with merged epitaxy backside cut and method

A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a fin, and a semiconductor layer. The fin is over the substrate, the semiconductor layer is over the fin, the substrate and the fin are made of different materials, and the fin and the semiconductor layer are made of different materials. The method includes forming a dielectric layer over the semiconductor layer and the fin. The method includes forming a semiconductor structure over a sidewall of the dielectric layer. The method includes removing a first top portion of the dielectric layer over a top surface of the semiconductor layer. The method includes forming a gate over the semiconductor layer, the dielectric layer, and the semiconductor structure.

Semiconductor device structure with fin and method for forming the same

A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes first and second stacking structures, isolation pillars, gate dielectric layers, channel layers and conductive pillars. The stacking structures are laterally spaced apart from each other. The stacking structures respectively comprises alternately stacked insulating layers and conductive layers. The isolation pillars laterally extend between the stacking structures. The isolation pillars further protrude into the stacking structures, and a space between the stacking structures is divided into cell regions. The gate dielectric layers are respectively formed in one of the cell regions, and cover opposing sidewalls of the stacking structures and sidewalls of the isolation pillars. The channel layers respectively cover an inner surface of one of the gate dielectric layers. The conductive pillars are separately located within the cell regions, and are laterally surrounded by the channel layers.

Three-dimensional memory device and manufacturing method thereof

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and a conductive rail structure between the first and second vertical structures. A top surface of the conductive rail structure can be substantially coplanar with top surfaces of the first and the second vertical structures.

Conductive rail structure for semiconductor devices

The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a stack of first semiconductor layers and second semiconductor layers over a substrate, etching the stack to form a source/drain (S/D) recess in exposing the substrate, and forming an S/D formation assistance region in the S/D recess. The S/D formation assistance region is partially embedded in the substrate and includes a semiconductor seed layer embedded in an isolation layer. The isolation layer electrically isolates the semiconductor seed layer from the substrate. The method also includes epitaxially growing an S/D feature in the S/D recess from the semiconductor seed layer. The S/D feature is in physical contact with the second semiconductor layers.

Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layer

The present disclosure describes a method of fabricating a semiconductor structure that includes forming a dummy gate structure over a substrate, forming a first spacer on a sidewall of the dummy gate structure and a second spacer on the first spacer, forming a source/drain structure on the substrate, removing the second spacer, forming a dielectric structure over the source/drain structure, replacing the dummy gate structure with a metal gate structure and a capping structure on the metal gate structure, and forming an opening in the dielectric structure. The opening exposes the source/drain structure. The method further includes forming a dummy spacer on a sidewall of the opening, forming a contact structure in the opening, and removing the dummy spacer to form an air gap between the contact structure and the metal gate structure. The contact structure is in contact with the source/drain structure in the opening.

Air-replaced spacer for self-aligned contact scheme

Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

Semiconductor devices and methods of fabrication thereof

The present disclosure provides a semiconductor device. The semiconductor device includes channel members vertically stacked over a substrate, a gate structure engaging the channel members, a gate spacer layer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, an inner spacer layer interposing the gate structure and the epitaxial feature, and a semiconductor layer interposing the inner spacer layer and the epitaxial feature.

Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial feature

Semiconductor device includes a substrate having multiple fins formed from a substrate, a first source/drain feature comprising a first epitaxial layer in contact with a first fin, a second epitaxial layer formed on the first epitaxial layer, and a third epitaxial layer formed on the second epitaxial layer, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion; a fourth epitaxial layer formed on the third epitaxial layer, a second source/drain feature adjacent the first source/drain feature, comprising a first epitaxial layer in contact with a second fin, a second epitaxial layer formed on the first epitaxial layer of the second source/drain feature, a third epitaxial layer formed on the second epitaxial layer of the second source/drain feature, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion of the third epitaxial layer of the second source/drain feature; and a fourth epitaxial layer formed on the third epitaxial layer of the second source/drain feature.

Semiconductor device with improved source and drain contact area and methods of fabrication thereof

In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.

Semiconductor structures and methods thereof

The present disclosure provides an integrated circuit that includes a circuit formed on a semiconductor substrate; and a de-cap device formed on the semiconductor substrate and integrated with the circuit. The de-cap device includes a filed-effect transistor (FET) that further includes a source and a drain connected through contact features landing on the source and drain, respectively; a gate stack overlying a channel and interposed between the source and the drain; and a doped feature disposed underlying the channel and connecting to the source and the drain, wherein the doped feature is doped with a dopant of a same type of the source and the drain.

Structure and method of integrated circuit having decouple capacitance

A semiconductor memory device includes a stack of alternating insulating layers and first conductive layers disposed over a substrate; a plurality of memory cell strings penetrating the stack over the substrate, each memory cell string comprising a central portion extending through the stack, a semiconductor layer surrounding the central portion, and a ferroelectric layer surrounding the semiconductor layer, and the central portion comprising a channel isolation structure and a second conductive layer and a third conductive layer at two sides of the channel isolation structure; and a plurality of cell isolation structures penetrating the conductive layers and the insulating layers over the substrate and disposed between two memory cell strings, each cell isolation structure comprising a top portion and a bottom portion adjoined to the top portion and different from the top portion.

Semiconductor memory device and manufacturing method thereof

Growing community of inventors

Zhubei, Taiwan

Chun-Fu Cheng