Industrial Technology Research Institute

Chun-Fan Dai

Tzung-Te Chen

Chien-Ping Wang

Pei-Ting Chou

Han-Kuei Fu

Yen-Liang Liu

Yi-Ping Peng

A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.

Testing method and testing system for semiconductor element

The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.

Testing apparatus

A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.

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Kaohsiung, Taiwan

Chun-Fan Dai