Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Fai Cheng

Ming-Huan Tsai

Wei-Yuan Lu

Kuan-Chung Chen

Ka-Hing Fung

Han-Ting Tsai

Wei-Han Fan

Shu-Yuan Ku

Hsueh-Chang Sung

Yimin Huang

Li-Ping Huang

Hui OuYang

Haiting Wang

Hsien-Ching Lo

Yen-Ming Chen

Chun-Feng Nieh

Yuan-Hung Chiu

Chih-Ming Sun

Fung Ka Hing

Chin-Te Su

Chii-Ming M Wu

Chang-Miao Liu

Hsien-Hsin Lin

Li-Wei Yin

An-Shen Chang

Bwo-Ning Chen

Shyh-Wei Wang

Hui-Min Lin

Huang-Sheng Ho

Tsz-Mei Kwok

Kuan-Yu Chen

Yu-Hsien Lin

Chih-Wei Lee

Liang-Yi Chen

Hui Ouyang

Chi-An Wang

A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer

Gate structures for semiconductor devices

A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

Semiconductor device structure and method for forming the semiconductor device structure

Gate cutting techniques for integrated circuit devices, particularly for fin-like field effect transistor devices, are disclosed herein. An exemplary method includes receiving an integrated circuit device that includes a gate structure and performing a gate cut process to separate the gate structure into a first gate structure and a second gate structure. The gate cut process includes selectively removing a portion of the gate structure, such that a residual gate dielectric layer extends between the first gate structure and the second gate structure. In some implementations, the residual gate dielectric includes a high-k dielectric material. The method further includes forming a gate isolation region between the first gate structure and the second gate structure.

Gate dielectric preserving gate cut process

A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

A field effect transistor includes a substrate and spacers over the substrate. The field effect transistor includes a channel recess cavity between the spacers, wherein a bottom-most surface of the channel recess cavity is parallel to the substrate top surface. The field effect transistor includes a gate stack, wherein the gate stack includes a bottom portion in the channel recess cavity and a top portion outside the channel recess cavity, the gate stack further includes a gate dielectric layer extending from the channel recess cavity along sidewalls of each of the pair of spacers, and the gate dielectric layer directly contacts the substrate below substrate top surface. The field effect transistor includes a strained source/drain (S/D) below the substrate top surface, wherein the strained S/D extends below the gate stack. The field effect transistor further includes a source/drain (S/D) extension substantially conformably surrounding the strained S/D.

Strained structure of a semiconductor device

A semiconductor structure includes a first metal gate disposed over a first device region of a semiconductor substrate, where the first metal gate includes a first work function metal layer, a second metal gate disposed over a second device region of the semiconductor substrate, where the second metal gate includes a second work function metal layer, a first gate cut feature separating the first metal gate, where sidewalls of the first gate cut feature are defined by the first work function metal layer and a bulk conductive layer, and a second gate cut feature separating the second metal gate, where sidewalls of the second gate cut feature are defined by the second work function metal layer but not by the bulk conductive layer.

Cutting metal gates in fin field effect transistors

A p-type field effect transistor includes a pair of spacers over a substrate top surface. The p-type field effect transistor includes a channel recess cavity in the substrate top surface between the pair of spacers. The p-type field effect transistor includes a gate stack with a bottom portion in the channel recess cavity. The p-type field effect transistor includes a source/drain (S/D) recess cavity including a bottom surface and sidewalls below the substrate top surface, wherein the S/D recess cavity includes a portion extending below the gate stack. The p-type field effect transistor includes a strained material filling the S/D recess cavity. The p-type field effect transistor further includes a source/drain (S/D) extension substantially conformably surrounding the bottom surface and sidewalls of the S/D recess cavity. The S/D extension includes a portion between the gate stack and the S/D recess cavity.

A method includes providing metal gate structures in a first and a second region, respectively, of a semiconductor substrate, simultaneously cutting the metal gate structures by a two-step etching process to form a first and a second trench in metal gate structures of the first and the second region, respectively, and filling each trench with an insulating material to form a first and a second gate isolation structure. Each step of the two-step etching process employs different etching chemicals and conditions. The metal gate structures in the first region and the second region differ in gate lengths and composition of gate electrode.

A method for controlling IC device strain and the devices thereby formed are disclosed. An exemplary embodiment includes receiving an IC device substrate having a device region corresponding to an IC device. An implantation process is performed on the device region forming an amorphous region within the device region. The IC device substrate is recessed to define a source/drain recess in the device region having a profile determined by the amorphous structure of the amorphous region. A source/drain epitaxy is then performed to form a source/drain structure within the source/drain recess.

Strained-channel semiconductor device fabrication

An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. The disclosed method comprises forming a wedge-shaped recess with an initial bottom surface in the substrate; transforming the wedge-shaped recess into an enlarged recess with a height greater than the height of the wedge-shaped recess; and epitaxially growing a strained material in the enlarged recess.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Hong Kong, China

Chun-Fai Cheng