Taiwan Semiconductor Manufacturing Comp. Ltd.

Forward Electronics Company Limited

Chun-Chih Lin

Yen-Yu Chen

Shih Wei Bih

Kuo-Shu Tseng

Chih-Wei Lin

Wen-Hao Cheng

Han-Wen Liao

Sheng-Wei Yeh

Chung-Liang Cheng

Chyi-Tsong Ni

Yi-Ming Dai

Yao-Yuan Shang

Yu-Ting Tsai

Wen-Cheng Lien

Chien-Hsun Pan

Chune-Te Yang

Hong-Ming Lo

Channing Chan

Ping-Tse Lin

Hsien-Chang Hsieh

Tah-Te Shih

Monica Ho

Wen-Hsong Wu

Yu-Jen Su

Chi-Hung Liao

Yung-Yao Lee

Chin-Szu Lee

Cheng-Yi Wu

Yi-Ming Lin

Jian-Shin Tsai

Jun-Xiu Liu

Hsuan-Chih Chu

Chao-Ching Chang

Wei Chang Cheng

Min-Hui Lin

Chien-Hung Wang

C H Chen

Wen-Shan Chang

Y T Tsai

Xuan-You Yan

Powen Huang

Sung-Chieh Lin

Jun Xiu Liu

Yung-Chang Huang

Jui-Mu Cho

Ko-Shao Chen

Yu-Chia Tsao

Chung-Pei Lee

Jia-Huey Tsao

Ren-Kun Liang

Chun-Keng Hsu

Chao-Lin Lee

A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Fluorine-free interface for semiconductor device performance gain

An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.

Exhaust system and process equipment

A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.

Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode

A nozzle assembly for use in liquid-dispensing system, the nozzle assembly includes a pipe having lumens; a body, an end of the pipe being mounted to the body; the pipe having a wall and a septum, the wall enclosing a space, the septum dividing the space enclosed by the wall into the lumens; each of the lumens being correspondingly terminated in an orifice such that a liquid is escapable from each lumen through the corresponding orifice and is thereby dispensable from the nozzle assembly.

Nozzle assembly for use with liquid dispensing system

A method of preventing drippage in a fluid dispensing system. The fluid dispensing system includes a first automatic control valve (ACV), an input of the first ACV connected to fluid-source of fluid, the first ACV having positions ranging from fully closed to fully open, and a second ACV, an input of the second ACV being connected to an output of the first ACV, and an output of the second ACV being connected to a nozzle, the second ACV having positions ranging from fully closed to fully open. The method includes generating a first proxy signal representing at least a first indirect measure of a position of the first ACV. The method includes recognizing, based on at least the first proxy signal that a failure state exists in which the first ACV has failed to close. The method includes causing the second ACV to close when the failure state exists.

Method of operating drippage prevention system

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Redistribution layer metallic structure and method

A multi-shield plate includes a plurality of windows and a plurality of vapor shields mounted to the plurality of windows, wherein each window of the plurality of windows is formed in the plate and extends through an entirety of the plate in a thickness direction. The multi-shield plate further includes a plurality of apertures in the plate, wherein each of the plurality of apertures extends through the entirety of the plate in the thickness direction and, an aperture of the plurality of apertures is aligned with a corresponding window of the plurality of windows along radius of the multi-shield plate.

Multi-shield plate and control system

A nozzle assembly for use in liquid-dispensing system, the nozzle assembly including: a body configured to receive a pipe; and the pipe, an end of the pipe being mounted on the body. The pipe includes multiple lumens correspondingly terminated in multiple orifices such that a liquid is escapable from each lumen through the corresponding orifice and is thereby dispensable from the nozzle assembly. The pipe has a first flow-capacity to supply a first volume of the liquid at a first flow-rate and at a first pressure. Each orifice and corresponding lumen has a second flow-capacity to supply a second volume of the liquid at a second flow-rate and at a second pressure.

Pipe design for prevent drip

A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium layer on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Electromagnetic module for physical vapor deposition

A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.

Vapor shield replacement system and method

A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier along a predetermined path multiple times using a transportation apparatus. The method also includes collecting data associated with an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool on the predetermined path in a previous movement of the transportation apparatus. The method further includes measuring the environmental condition within the wafer carrier or around the wafer carrier using the metrology tool during the movement of the wafer carrier. In addition, the method includes issuing a warning when the measured environmental condition is outside a range of acceptable values. The range of acceptable values is derived from the data collected in the previous movement of the transportation apparatus.

Metrology method in wafer transportation

An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.

Thermal chamber exhaust structure and method

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Taipei, Taiwan

Chun-Chih Lin