Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Chun-Chih Ho

Ching-Yu Chang

Chin-Hsiang Lin

An-Ren Zi

Yahru Cheng

Wei-Fang Su

Yu-Chung Su

Kuan-Hsin Lo

Chi-An Dai

Shang-Jung Wu

In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.

Method of manufacturing semiconductor devices and pattern formation method

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Photoresist composition and method of forming photoresist pattern

A method of forming a semiconductor device includes forming a plurality of non-insulator structures on a substrate, the plurality of non-insulator structures being spaced apart by trenches, forming a sacrificial layer overfilling the trenches, reflowing the sacrificial layer at an elevated temperature, wherein a top surface of the sacrificial layer after the reflowing is lower than a top surface of the sacrificial layer before the reflowing, etching back the sacrificial layer to lower the top surface of the sacrificial layer to fall below top surfaces of the plurality of non-insulator structures, forming a dielectric layer on the sacrificial layer, and removing the sacrificial layer to form air gaps below the dielectric layer.

Air gap formation method

A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.

Method for forming patterned photoresist

A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.

Photosensitive middle layer

Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.

Priming material for organometallic resist

The invention is related to a manufacturing method for enhancing an ordered structure of block copolymers, and more particularly to a thermal annealing process for block copolymers having conducting polymers and rod segments. The manufacturing method includes the following steps: (A) providing a block copolymer and a small molecule additive, wherein the block copolymer is formed of first monomers containing at least one aromatic ring and second monomers optionally containing at least one aromatic ring; and the small molecule additive is a aliphatic molecule, an aromatic molecule or a combination thereof; (B) blending the block copolymer and the small molecule additive to form a mixture; and (C) treating the mixture with a thermal annealing process to manufacture and facilitate the ordered structure of the block copolymers.

Manufacturing method for enhancing ordered structure of block copolymers

The present invention discloses a composite material with electron-donating and electron-accepting property is disclosed, wherein the composite material comprises a plurality of nanoparticles with electron-accepting property, a plurality of diblock copolymers, and a bi-continuous structure. Each diblock copolymer comprises a first polymer chain with electron-donating property and a second polymer chain connected with the mentioned nanoparticles. Additionally, the bi-continuous structure containing a first domain and a second domain, wherein the bi-continuous structure is self-assembled from the diblock copolymers, wherein the first polymer chain is in the first domain, and the second polymer chain and the plurality of nanoparticles are in the second domain. Furthermore, this invention also discloses methods for forming the composite material and their applications.

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Taichung, Taiwan

Chun-Chih Ho