Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Chih Cheng

Ming-Hsi Yeh

Kuo-Bin Huang

Yean-Zhaw Chen

Ying-Ting Hsia

I-Hsiu Wang

Chia-Ling Chung

Jhao-Ping Jiang

Kuo-Feng Yu

Jian-Hao Chen

Hui-Chi Chen

Ying-Liang Chuang

Wei-Cheng Wang

Shih-Hang Chiu

Chia-Wei Chen

Yen-Ju Chen

Wei Cheng Hsu

Kuan-Ting Liu

Shun Wu Lin

Wei-Chen Hsiao

Shun-Wu Lin

Pei Yun Chung

A semiconductor device includes stacks of nano-structures that each extend in a first horizontal direction. The stacks each extend in a vertical direction and are separated from one another in a second horizontal direction. A first gate is disposed over a first subset of the stacks. A second gate is disposed over a second subset of the stacks. A first conductive capping layer is disposed over a substantial entirety of an upper surface of the first gate. A second conductive capping layer is disposed over a substantial entirety of an upper surface of the second gate. A dielectric structure is disposed between the first gate and the second gate in the second horizontal direction. The dielectric structure physically and electrically separates the first gate and the second gate. An upper surface of the dielectric structure is substantially free of having the first or second conductive capping layers disposed thereon.

Forming low-resistance capping layer over metal gate electrode

A method of forming a semiconductor device includes the following steps. A metal layer with at least one silicon-containing pattern therein is provided. A first wet etching process is performed by using a first etching solution, to clean a surface of the metal layer, wherein the first etching solution contains a base and a first oxidant. At least one cycle is performed. Each cycle includes a second wet etching process and a cleaning process. The second wet etching process is performed by using a second etching solution, to remove the metal layer, wherein the second etching solution contains an acid and a second oxidant. A cleaning process is performed.

Semiconductor devices and method of forming the same

A method of fabricating a semiconductor device is described. A substrate is provided. A first semiconductor region of a first semiconductor material is formed over the substrate and adjacent a second semiconductor region of a second semiconductor material. The first and second semiconductor regions are crystalline. An etchant is selective to etch the first semiconductor region over the second semiconductor region. The entire first semiconductor region is implanted to form an amorphized semiconductor region. The amorphized semiconductor region is etched with the etchant using the second semiconductor region as a mask to remove the amorphized semiconductor region without removing the second semiconductor region.

Semiconductor devices and methods of manufacturing thereof

A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

A method for selectively removing a tungsten-including layer includes: forming a tungsten-including layer which has a first portion and a second portion; performing a treatment on a surface region of the first portion of the tungsten-including layer so as to convert tungsten in the surface region into tungsten oxide; and partially removing the tungsten-including layer using an etchant which has a higher etching selectivity to tungsten than tungsten oxide such that the second portion of the tungsten-including layer is fully removed, and the first portion of the tungsten-including layer, having the tungsten oxide in the surface region, is at least partially retained.

Method for partially removing tungsten in semiconductor manufacturing process

A semiconductor device includes a semiconductor substrate, a pair of source/drain regions on the semiconductor substrate, and a gate structure on the semiconductor substrate and between the pair of source/drain regions. The gate structure includes a first metal layer and a second metal layer in contact with the first metal layer. A sidewall of the first metal layer and a top surface of the semiconductor substrate form a first included angle, a sidewall of the second metal layer and the top surface of the semiconductor substrate form a second included angle. The second included angle is different from the first included angle.

Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer is formed over the semiconductor substrate. A plurality of dopants is formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing of the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion. An underneath layer is patterned to form a hole in the underneath layer using the patterned first semiconductive layer as a mask to pattern. A sidewall profile of the hole in the underneath layer is controlled by the first sidewall profile of the first portion of the first semiconductive layer.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer over the semiconductor substrate is formed. A plurality of dopants are formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.

Growing community of inventors

Changhua County, Taiwan

Chun-Chih Cheng