Merry Electronics (Shenzhen) Co., Ltd.

Winbond Electronics Corporation

Sensor Tek Co., Ltd.

Merry Electronics Co., Ltd.

Chun-Chieh Wang

Jen-Yi Chen

Chao-Sen Chang

Yong-Shiang Chang

Mao-Chen Liu

Shu-Yi Weng

Po-Wei Lu

Wen-Chieh Chou

Tzu-Ming Ou Yang

Ming-Tang Chen

Cheol Soo Park

Shu-Ming Lee

Kuan-Hsun Chiu

Ling-Chun Tseng

Hung-Jen Chen

Yung-Shiang Chang

Ming-Li Hsu

Hung-Jung Yan

Hao-Ming Chao

A semiconductor structure and its manufacturing method are provided. A semiconductor structure includes a substrate and several bit lines on the substrate. Each of the bit lines includes a first conductive layer on the substrate, a second conductive layer on the first conductive layer, and a hardmask layer on the second conductive layer. The semiconductor structure further includes several contacts disposed on the substrate and positioned between two adjacent bit lines, wherein the bottom surfaces of the contacts physically contact the substrate. The top surfaces of the contacts are not higher than the top surfaces of the hardmask layers. Each of the contacts includes a bottom contact part on the substrate and a top contact part on the bottom contact part, and a width of a top surface of the top contact part is greater than a width of a top surface of the bottom contact part.

Semiconductor structure and method of manufacturing the same

A method for forming a semiconductor memory structure includes forming a plurality of conductive wire structures over a semiconductor substrate, and forming a plurality of spacer structures along the sidewalls of the conductive wire structures. Each of the spacer structures includes a first spacer. The method also includes forming a plurality of dielectric strips across the conductive wire structures, forming a plurality of conductive strips over the conductive wire structures and the dielectric strips, performing a patterning process on the conductive strips to form a plurality of conductive pads, and removing the first spacer of each of the spacer structures to form a gap in each of the spacer structures.

Semiconductor memory structure and method for forming the same

Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Capacitor structure

Capacitor structure and method of manufacturing the same

A micro-electro-mechanical system (MEMS) chip package including a circuit substrate, a driving chip and a MEMS sensor is provided. The circuit substrate has a first surface and a second surface opposite thereto. The driving chip is embedded within the circuit substrate and includes a first signal transmission electrode, a second signal transmission electrode and a third signal transmission electrode. The MEMS sensor is disposed on the first surface of the circuit substrate. The circuit substrate includes at least one first conductive wiring electrically connected with the first signal transmission electrode and at least one second conductive wiring electrically connected with the second signal transmission electrode. The first conductive wiring is merely exposed at the first surface and the second conductive wiring is merely exposed at the second surface. The MEMS sensor is electrically connected with the first signal transmission electrode through the first conductive wiring.

MEMS chip package

A Micro-Electro-Mechanical-System (MEMS) microphone device includes a substrate, a MEMS microphone thin film, oxide layer. The substrate has a first penetrating portion. The MEMS microphone thin film is above the substrate and covered the first penetrating portion defining a first cavity. The MEMS microphone thin film includes an elastic portion and a connection portion. The elastic portion has a plurality of first slots arranged along the edge of the elastic portion and sequentially and separately. The first slots are penetrated two surface of the elastic portion, the surface are opposite each other. The connection portion is connected to the elastic portion and contacted the substrate. The oxide layer has a second penetrating portion. The oxide layer is on the MEMS microphone thin film and contacted the connection portion. A part of the MEMS microphone thin film is exposed through the second penetrating portion.

MEMS microphone device

An acoustic transducer with high sensitivity includes a base plate, a back plate and a vibrating membrane. The vibrating membrane is peripherally fixed to the base plate and covers an opening of the base plate. The back plate has a positioning member connected between the back plate and the vibrating membrane, so as to define at least one vibratile portion that is arranged annularly by a plurality of elastic members. Thereby, the vibratile portion has a reduced deformable width and increased rigidity, so can effectively improve its acoustically receiving sensitivity and signal-to-noise ratio.

Acoustic transducer with high sensitivity

A multi-floor type MEMS microphone includes a housing formed by a stack of circuit boards and provided with a first cavity, a second cavity in vertical communication with the first cavity, and a sound hole in communication with the second cavity. The second cavity has a vertical cross-sectional area smaller than that of the first cavity. A MEMS transducer is disposed in the second cavity and electrically conducted with the housing, and an ASIC chip is disposed in the first cavity and electrically conducted with the housing. By this design, the volume of the back chamber of a vibrating diaphragm of the MEMS transducer can be increased in a limited space of the housing, and thus the sensitivity of the microphone can be improved.

Multi-floor type MEMS microphone

An MEMS microphone package structure includes a substrate, a carrier and an acoustic transducer. The carrier covers the substrate from above and connects to the substrate. The carrier has an n-shaped cross section and includes a flat plate portion, a sidewall connected to the flat plate portion, and two oblique blocks protruded from the inner surface of the sidewall. The oblique blocks each have an inclined surface for connecting the flat plate portion and the bottom surface of the sidewall. The acoustic transducer is posited on the bottom surface of the flat plate portion and electrically connected to the substrate through a plurality of electrical conduction paths passing through the inclined surfaces. The electrical conduction paths are conducive to simplification of wirings of the substrate and the thinning of the substrate. Therefore, simplify the manufacturing process to reduce the manufacturing time and cost.

MEMS microphone package structure having an improved carrier and a method of manufacturing same

A MEMS microphone package structure having a non-planar substrate includes the non-planar substrate, a cover plate, and a sound wave transducer. The non-planar substrate has a carrying bottom portion and a sidewall. The carrying bottom portion has a sound hole. The cover plate covers the non-planar substrate from above and connects to the sidewall. Both the cover plate and the sidewall have a metal layer for shielding the microphone from electromagnetic interference. The sound wave transducer is located corresponding to the sound hole. Hence, the sidewall reinforces the non-planar substrate, such that the carrying bottom portion is thinned without weakening the non-planar substrate, so as to increase the capacity of a back chamber of the microphone without changing the appearance and dimensions of the package structure.

MEMS microphone package structure having non-planar substrate and method of manufacturing same

A dual-diaphragm acoustic transducer includes a substrate defining an opening, an inner diaphragm and an outer diaphragm concentrically mounted at one same side of the substrate corresponding to the opening of the substrate, and a plurality of elastic supporting members connected between the outer perimeter of the inner diaphragm and the inner perimeter of the outer diaphragm. Thus, when a sound wave enters the opening of the substrate, the sound wave pressure forces the outer diaphragm to displace and to carry the inner diaphragm to move, and the inner diaphragm itself will also be forced by the sound wave pressure to have a larger displacement than the outer diaphragm, enhancing the sensitivity. Further, using the inner and outer diaphragms to respond to different sound wave pressures can enhance the sound wave pressure sensing range.

Dual-diaphragm acoustic transducer

A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Thin film apparatus

A MEMS apparatus includes a pillar, a supporter, and a solder. The pillar has a first side and a second side opposite to the first side. The supporter supports the pillar. The supporter is adjacent to the pillar, but the supporter is not connected to the pillar. The supporter has a third side and a fourth side opposite to the third side. The supporter includes a plurality of first confined layers and a plurality of second confined layers. These first confined layers and these second confined layers are overlapped with each other. The second side and the third side are adjacent to each other. The solder is located between the second side and the third side. The solder is also located at the first side and the fourth side. The solder is utilized to combine the pillar and the supporter. The solder also isolates the pillar and the supporter.

MEMS apparatus

A MEMS microphone chip with an expanded back chamber includes a first chip unit and a second chip unit. The first chip unit has a first substrate, a vibration membrane layer is formed above an end of the first substrate, and a space is formed below the vibration membrane layer of the first substrate, so that the vibration membrane layer is suspended above the first substrate to vibrate. The second chip unit has a second substrate to couple with another end of the first substrate, and a groove is formed in the second substrate with a width larger than that of the space; when the first substrate and the second substrate are coupled together, the groove and the space are connected together to act as the back chamber of the vibration membrane layer.

Growing community of inventors

Taichung, Taiwan

Chun-Chieh Wang