Taiwan Semiconductor Manufacturing Comp. Ltd.

Acer Inc.

Industrial Technology Research Institute

Au Optronics Corporation

Mstar Semiconductor, Inc.

Metal Industries Research & Development Centre

Chunghwa Picture Tubes, Ltd.

Qisda Corporation

Upi Semiconductor Corporation

Coretronic Corporation

Wistron Corporation

National Synchrotron Radiation Research Center

Forward Electronics Company Limited

Merry Electronics (suzhou) Co., Ltd.

Jantec Corp.

Chun-Chieh Wang

Shih-Chieh Chang

Huai-Tei Yang

Cheng-Wen Hsieh

Wen-Neng Liao

Yueh-Ching Pai

Zheng-Yang Pan

Shahaji B More

Yu-Ming Lin

Cheng-Han Lee

Tsung-Ting Chen

Yu-Ting Lin

Chen-Hsien Liao

Jau-Han Ke

Yu-Liang Chung

Chi-Jen Yang

Wei-Chin Chen

Chung-Shi Liu

Hsien-Ming Lee

Po-Yu Lin

Chun-Liang Lin

Kuang-Hua Lin

Yi-Ting Wang

Tsung-Ta Tang

Chi-Yu Chou

Shu-Hao Kuo

Hung-Jui Kuo

Ying-Lang Wang

Chien Ling Hwang

Yi-Wen Wu

Tai-Lai Tung

Yi-Min Huang

Chih-Lien Chang

Hsiang Hsiang Ko

Tzyy-Ker Sue

Yu-Hui Chou

Wen Chu Hsiao

Ying Min Chou

Lai Wan Chong

Fu-Sheng Jiang

Chia-Min Wei

Tsung-Lin Lee

Ya-Ling Hsu

Yi-Ta Huang

Jaw-Jung Shin

Sheng-Wen Cheng

Ming-Tan Lee

Kuan-Lin Chen

Hung-Chun Li

Kuei-Li Huang

Sheng-Wei Yeh

Chi-Tai Ho

Yan-Chen Liu

Kuo-Wei Wen

Ying-Min Chou

Chi-Wah Keong

Long-Der Chen

Sheng-Yan Chen

Mu-Liang Wang

Shiu-Ko JangJian

Chien-Chih Chen

Cheng-Nan Ling

Hung-Chi Chen

Hsueh-Ying Huang

Cheng-Wei Chang

Bor-Ping Jang

Huang-Yi Huang

Wu-Chen Lee

Ken-Yu Chang

Tung-Chuan Wu

Yi-Ying Liao

Chien-Chao Tseng

Min-Hsiu Hung

Ko-Yin Lai

Chun-Jung Chen

Yu-Shih Wang

Chun-Hsien Liu

Wen-Chu Hsiao

Tung-Sheng Lin

Lai-Sheng Chen

Fan-Chieh Chang

Wei-Chieh Sun

Hui Chu Ke

Tung-Hsin Lan

Jen-Yi Chen

Yu-Wen Cheng

Chuan-Hua Wang

Jui-Yiao Su

Hsiang-Hsiang Ko

Ching-Fu Lan

Yen-Chiu Chen

Ying-Li Wang

Guan-Hsien Du

Jy-Jie Gau

Chung-Ting Chen

Chia-Hung Huang

Chien-Yi Yang

Wei-Der Chung

Ching-Hsiang Chang

Chin-Chuan Huang

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure, and a gate spacer layer formed on a sidewall surface of the gate structure. The semiconductor structure includes a source/drain (S/D) epitaxial layer formed adjacent to the gate structure, and a dielectric spacer layer formed on the S/D epitaxial layer. The semiconductor structure includes a contact plug barrier formed over the S/D epitaxial layer, and a contact plug surrounding by the contact plug barrier, wherein the contact plug is separated from the gate spacer layer by the dielectric spacer layer and the contact plug barrier.

Semiconductor structure with source/drain multi-layer structure and method for forming the same

A heat dissipation system suitable for a portable electronic device with two heat sources includes a centrifugal fan, two heat dissipation fin sets, a gate, a first heat pipe, a second heat pipe, and a control unit. The centrifugal fan has a main outlet and a sub outlet. The heat dissipation fin sets are disposed respectively at the main outlet and the sub outlet, and the gate is disposed at the sub outlet. The first heat pipe thermally contacts the heat sources and the heat dissipation fin set located at the main outlet. The second heat pipe thermally contacts one of the heat sources and the two heat dissipation fin sets. The control unit is electrically connected to the gate to drive the gate to open or close the sub outlet based on a load of the two heat sources.

Heat dissipation system

A multi-loop cycling heat dissipation module including a first tank, a first pipe, a second tank, and a second pipe is provided. The first pipe is connected to the first tank to form a first loop, a first working fluid fills the first loop to transfer heat via phase transformation, and a first high-temperature section and a first low-temperature section are formed on the first pipe. The second pipe is connected to the second tank to form a second loop, a second working fluid fills the second loop to transfer heat via phase transformation, and a second high-temperature section and a second low-temperature section are formed on the second pipe. The first high-temperature section is in thermal contact with the second low-temperature section, and the first low-temperature section is in thermal contact with the second high-temperature section.

Multi-loop cycling heat dissipation module

A thermal module includes a fan and a fin assembly. The fan has an air outlet. The fin assembly has multiple fins, and is disposed to the air outlet of the fan. The fins are disposed side by side to form multiple flow channels. Each of the flow channels has a first inlet, at least one second inlet, and an outlet. In each of the flow channels, a gas flow generated by the fan flows into the flow channel from the first inlet and flows out of the flow channel from the outlet, and a gas flow outside the fin assembly is drawn by the gas flow in the flow channel to flow into the flow channel from the at least one second inlet.

Thermal module

A method of forming an integrated circuit structure includes forming a gate dielectric on a wafer, forming a work function layer over the gate dielectric, depositing a capping layer over the work function layer, soaking the capping layer in a silicon-containing gas to form a silicon-containing layer, forming a blocking layer after the silicon-containing layer is formed, and forming a metal-filling region over the blocking layer.

Silicon intermixing layer for blocking diffusion

Provided is a centrifugal heat dissipation fan including a housing and an impeller. The impeller is disposed in the housing. The impeller has a hub and multiple blades disposed surrounding the hub. Every two adjacent blades have different blade structures relative to the housing such that the blade structures pass by a fixed position of the housing and generate blade tones of varying frequencies when the impeller rotates.

Centrifugal heat dissipation fan

A device state evaluation method based on current signals is applied to a target device that is powered on, the device state evaluation method includes: collecting a plurality of target current signals corresponding to the target device via an acquisition module; performing a signature extraction operation and a normalization operation via a computing module to obtain a target matrix by using the plurality of target current signals; and performing a diagnosis operation on the target matrix via a diagnosis module to identify whether the target device is in a malfunction state, where an identification result of the diagnosis operation is used as target information. Therefore, whether the target device is in the malfunction state can be evaluated by analyzing the plurality of target current signals. A device state evaluation system is also provided.

Device state evaluation system and evaluation method based on current signals

The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Formation and in-situ etching processes for metal layers

Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Gate structure and semiconductor device having the same

The present invention relates to a composite laminate plate, a housing and a mobile communication device. The composite laminate includes a top metal layer with a through hole and an array antenna, and an area ratio of the array antenna to the through hole meets a specific range, thereby enhancing wave transmissivity of a millimeter wave. Moreover, the composite laminate has a specific material structure, such that it has good mechanical properties and low density. The housing and the mobile communication device made by the composite laminate have advantages of metallic texture, high signal intensity and excellent effect for light weight tendency.

Composite laminate plate, housing and mobile communication device

A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Heat dissipation system of electronic device

The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.

Fully strained channel

A heat dissipation system of portable electronic device includes a body, at least one fan and at least one spacing member. At least one heat source of the portable electronic device is arranged in the body. The fan is a centrifugal fan disposed in the body. The fan has at least one flow inlet located in the axial direction and at least one flow outlet located in the radial direction. The spacing member is disposed on at least one of the body or the fan to form a stratified air flow in the body along the axial direction. The stratified air flows into the fan through the flow inlet and out of the fan through the flow outlet respectively.

Heat dissipation system of portable electronic device

A vapor chamber structure for heat dissipation of a heat source is provided. The vapor chamber structure includes a housing having a heat absorption side and a heat dissipation side, a first capillary structure disposed in the housing, and a working fluid filled in the housing. The first capillary structure is formed into cavities isolated from each other, and each of the cavities is connected between the heat absorption side and the heat dissipation side. Heat generated by the heat source is absorbed by the heat absorption side, thereby transforming the working fluid from liquid state to vapor state. The working fluid in the vapor state is transmitted to the heat dissipation side via the cavities, and is transformed to the liquid state while the heat is dissipated. The working fluid in the liquid state returns to the heat absorption side via the first capillary structure.

Vapor chamber structure

A projector and a projection method are provided. The projector includes a control device, a projection optical engine, a distance sensing device, and an image capturing device. The projection optical engine projects a first projection image to a projection surface according to first image data. The distance sensing device senses multiple distance parameters of a projection area. The image capturing device captures the first projection image to obtain a first captured image. The control device performs a keystone correction operation and a leveling correction operation on the first image data. The projection optical engine projects a second projection image to the projection surface according to the corrected first image data. The control device obtains a second captured image including the second projection image through the image capturing device, and analyzes the second captured image to project current projection image size information in the second projection image.

Projector and projection method

Growing community of inventors

Kaohsiung, Taiwan

Chun-Chieh Wang