United Microelectronics Corp.

Chun-Chi Huang

Tsun-Min Cheng

Shin-Chi Chen

Chih-Yueh Li

Wen-Yi Teng

Chuang-Han Hsieh

Hsin-Hsing Chen

Hui-Lung Chou

Yung-Feng Lin

Yung-Hung Yen

A semiconductor structure including a substrate, a dielectric layer, a first conductive layer, and a passivation layer is provided. The dielectric layer is disposed on the substrate. The first conductive layer is disposed on the dielectric layer. The passivation layer is disposed on the first conductive layer and the dielectric layer. The passivation layer includes a first upper surface and a second upper surface. The first upper surface is located above a top surface of the first conductive layer. The second upper surface is located on one side of the first conductive layer. A height of the first upper surface is higher than a height of the second upper surface. The height of the second upper surface is lower than or equal to a height of a lower surface of the first conductive layer located between a top surface of the dielectric layer and the first conductive layer.

Semiconductor structure

A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.

Semiconductor device having bilayer metal layer

An optical critical dimension measuring method, applicable in measuring a pattern, that includes a plurality of polysilicon layers, of a device, is provided. The method includes obtaining a real curve corresponding to the to-be-measured device. Then, determining whether an ion implantation process has been performed on the polysilicon layers, a different module is selected. A correlation process is performed according to the selected module to generate a theoretical curve that correlates with the real curve to obtain a plurality of parameters corresponding to the theoretical curve.

Method for constructing module for optical critical dimension (OCD) and measuring method of module for optical critical dimension using the module

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Tainan, Taiwan

Chun-Chi Huang