Taiwan Semiconductor Manufacturing Comp. Ltd.

Medicustek, Inc.

Other

Lite-on Technology Corporation

Lite-on Electronics (guangzhou) Limited

Chung-shan Institute of Science and Technology, Armaments Bureau, M.n.d

Nan Juen International Co., Ltd.

Yuan-shin Materials Technology Corp.

Peaktop Limited

Medx Technology Inc.

Chun Che Lin

Shiu-Ko JangJian

Chih-Nan Wu

Tsung-Hsuan Hong

Wen-Cheng Hsuku

Chi-Wen Liu

Chia-Ming Hsu

Chin-Nan Wu

Yu-Ku Lin

Chung-Chih Lin

Po-Chung Cheng

Huai-Tei Yang

Tzung-Chi Fu

Ting-Chun Wang

Jung-Chih Tsao

Jian-Shin Tsai

Chih-Chung Chang

Jia-Ming Lin

Wei Chih Lin

Yu-Ming Huang

Chih-Hung Wang

Ming-Fa Wu

Chi Liu

Tain-Shang Chang

Mark Anderson

Han-Chang Lee

Shiu-Ko Jang Jian

Ling-Hsuan Liu

Yung Yu Yin

Chuan Yu Chou

Gernot Ehrlich

Ching Fang Kam

Lung-Chun Tsai

Chao-Hung Chou

Kuang Yao Lo

Jonathan Lun-Chang Tong

Hung Cheng Yin

Chien Yi Sun

An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.

Etch stop layer in integrated circuits

A pressure sensing device includes a substrate, at least a pressure sensing module, and a packaging layer. The pressure sensing module is arranged at the substrate including a plurality of conductive units, a plurality of pressure sensing blocks and a plurality of buffer units. Each conductive unit has a first electrode and a second electrode. The pressure sensing blocks are respectively arranged at the conductive units. Each pressure sensing block has a circuit structure that electrically connects the first electrode and the second electrode of each corresponding conductive unit. Each buffer unit is arranged between each corresponding conductive unit and each corresponding pressure sensing block comprising a plurality of buffer bumps arranged in an array at the first electrode and the second electrode of each corresponding conductive units. The packaging layer is bonded to the substrate, the conductive units and the pressure sensing blocks.

Pressure sensing device and manufacturing method thereof

An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon. The gate structure includes a gate dielectric layer disposed on the substrate, a growth control material disposed on a side surface of the gate structure, and a gate electrode fill material disposed on the growth control material. The gate electrode fill material is also disposed on a bottom surface of the gate structure that is free of the growth control material. In some such embodiments, the gate electrode fill material contacts a first surface and a second surface that are different in composition.

Selective growth for high-aspect ratio metal fill

An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

EUV collector contamination prevention

Gate structures and methods of forming the gate structures are described. In some embodiments, a method includes forming source/drain regions in a substrate, and forming a gate structure between the source/drain regions. The gate structure includes a gate dielectric layer over the substrate, a work function tuning layer over the gate dielectric layer, a first metal over the work function tuning layer, an adhesion layer over the first metal, and a second metal over the adhesion layer. In some embodiments, the adhesion layer can include an alloy of the first and second metals, and may be formed by annealing the first and second metals. In other embodiments, the adhesion layer can include an oxide of at least one of the first and/or second metal, and may be formed at least in part by exposing the first metal to an oxygen-containing plasma or to a natural environment.

Metal gate scheme for device and methods of forming

A method comprises forming an image sensor adjacent to a first side of a substrate, thinning a second side of the substrate, performing a halogen treatment on the second side of the substrate and forming a backside illumination layer on the second side of the substrate.

Surface treatment for BSI image sensors

A pressure sensing mat may include: a first substrate; a second substrate disposed opposite to the first substrate; a first electrode layer disposed on a side of the first substrate that faces the second substrate, the first electrode layer comprising a plurality of first electrode patterns; a second electrode layer disposed on a side of the second substrate that faces the first substrate, the second electrode layer comprising a plurality of second electrode patterns; and a spacer layer disposed between the first substrate and the second substrate and comprising a plurality of holes such that the first electrode patterns are configured to contact the second electrode patterns through the holes.

Pressure sensing device

A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.

Growing community of inventors

Tainan, Taiwan

Chun Che Lin