Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Chang Wu

Feng-Jia Shiu

Ching-Sen Kuo

Chun-Chang Chen

Shun-Shing Yang

Chihy-Yuan Cheng

Sz-Fan Chen

Wei-Lin Chang

A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.

Improving surface topography by forming spacer-like components

Surface topography by forming spacer-like components

A semiconductor structure includes a substrate having a first region and a second region being adjacent each other; a first patterned layer formed on the substrate, wherein the first patterned layer includes first features in the first region, wherein the second region is free of the patterned layer; and a first guard ring disposed in the second region and surrounding the first features, wherein the first guard ring includes a first width Wand is spaced a first distance Dfrom the first features, Wbeing greater than D

Integrated circuit structure with guard ring

A method includes forming a patterned layer on a substrate having a first region and a second region being adjacent each other. The patterned layer includes first features in the first region. The second region is free of the patterned layer. The method further includes forming a material layer on the patterned layer and the substrate; forming a first guard ring disposed in the second region and surrounding the first features; forming a flowable-material (FM) layer over the material layer; forming a patterned resist layer over the FM layer, wherein the patterned resist layer includes a plurality of openings; and transferring the plurality of openings to the material layer.

Method of planarizating film

Growing community of inventors

Nantou County, Taiwan

Chun-Chang Wu