Samsung Electronics Co., Ltd.

Chulsung Kim

Yoonhae Kim

Hwichan Jun

Doo-Young Lee

Heungsik Park

Hyoseok Choi

Donghyun Kim

Cheol Kyu Kim

Daeyong Kim

Myeongcheol Kim

Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

Semiconductor device

Semiconductor device with field effect transistors and method of fabricating the same

Provided are a semiconductor device and a fabrication method thereof. The semiconductor device may include a fin-shaped active pattern and a gate electrode provided on a substrate, first and second spacers provided on a sidewall of the gate electrode, impurity regions provided at both sides of the gate electrode, a contact plug electrically connected to one of the impurity regions, and a third spacer enclosing the contact plug and having a top surface positioned at substantially the same level as a top surface of the contact plug.

Semiconductor device and method of fabricating the same

Growing community of inventors

Seongnam-si, South Korea

Chulsung Kim