Samsung Display Co., Ltd.

Chulmin Bae

Changok Kim

Wooseok Jeon

Sanghyun Jeon

Jihye Han

Byeong-Beom Kim

Sanggab Kim

Sunghoon Yang

Woo-Seok Jeon

Shinil Choi

Subin Bae

Yeoungkeol Woo

Yugwang Jeong

Jinho Hwang

Eunjin Kwak

A method of manufacturing a display panel including: sequentially forming a first layer and a second layer on a carrier substrate such that bottom surfaces of the first layer and the second layer face the carrier substrate; forming a panel substrate including a first base layer on a top surface of the second layer such that a bottom surface of the first base layer faces the second layer; forming a display layer on the panel substrate; and separating the panel substrate from the second layer.

Display panel and method of manufacturing the same

Provided is a display device including an organic insulating layer; a pixel electrode on the organic insulating layer; a pixel defining layer configured to cover an edge of the pixel electrode, having an opening corresponding to the pixel electrode, the pixel defining layer including a first layer including an inorganic insulating material and a second layer having less light transmittance in a first wavelength band than the first layer; an intermediate layer on a portion of the pixel electrode exposed via the opening, and including an emission layer; and an opposite electrode on the intermediate layer.

Display device structure for reducing defects

A display apparatus includes a blue light blocking layer to block a blue light which is not converted by a color conversion layer, and a reflection preventing layer over the blue light blocking layer to prevent reflection of external light incident thereon.

Display device including quantum dot color filter

An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter 'high-k') insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.

Organic light emitting display device having high dielectric constant insulation layer

A display device includes a thin film transistor, a gate insulting layer, an interlayer insulating layer, a data line, a spacer, and a pixel. The thin film transistor includes a semiconductor layer and a gate electrode. The semiconductor layer includes a source region and a drain region on respective sides of the channel region. The gate insulating layer is between the semiconductor layer and the gate electrode. The interlayer insulating layer covers the thin film transistor. The data line contacts the semiconductor layer via a hole passing through the gate insulating layer and the interlayer insulating layer. The spacer is on an inner wall of the hole and contacting the data line. The pixel electrode is electrically connected to the thin film transistor.

Display device

Quantum dot color filter and display device including the same

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Yongin-si, South Korea

Chulmin Bae