Samsung Electronics Co., Ltd.

Chulhee Kim

Kwang Hee Lee

Won Jae Joo

Tae Lim Choi

Sang Kyun Lee

Inyong Hwang

Jaesung Kwon

Seongchan Lee

Sung-Jun Cho

Subin Yun

Changhak Lim

A refrigerator is provided. The refrigerator includes: an outer case forming an exterior of the refrigerator; an inner case disposed inside the outer case, forming a storage compartment therein, and having a communication hole formed through a side surface thereof; a partition supported by the inner case to partition the storage compartment, and including a heat insulator inlet at a position corresponding to the communication hole; and a heat insulator filled between the outer case and the inner case and filled into the partition through the heat insulator inlet, wherein the partition includes a first vertical partitioning wall disposed between the outer case and the inner case and having a height to limit a size of the heat insulator inlet.

Refrigerator

A refrigerator having an improved structure that enhances the cooling efficiency. The refrigerator includes a main body, a storage compartment formed inside the main body, and a cold air supplier to supply cold air to the storage compartment, the cold air supplier including a compressor compressing a refrigerant, a condenser condensing the compressed refrigerant, a decompressor expanding the condensed refrigerant, an evaporator disposed at a rear of the storage compartment to evaporate the expanded refrigerant, and a refrigerant moving tube connecting the evaporator to the compressor through which the evaporated refrigerant is moved to the compressor so that the refrigerant is recirculated, wherein the evaporator includes a case, a refrigerant tube disposed inside the case such that the refrigerant introduced into the evaporator flows therethrough, and connected to the refrigerant moving tube at an inside of the case, and a heat insulating material filling the inside of the case to cover where the refrigerant tube and the refrigerant moving tube are connected to each other.

Disclosed herein is a volatile negative differential resistance device using metal nanoparticles, the device includes an organic layer disposed between two metal electrodes, in which the organic layer includes uniformly dispersed metal nanoparticles having a diameter of about 10 nm or less in an organic material. The device of this invention exhibits a volatile negative differential resistance phenomenon at room temperature upon application of a voltage and is thus suitable for use in various switching devices and logic devices, with excellent reproducibility and simple inexpensive processing.

Volatile negative differential resistance device using metal nanoparticles

A dendrimer according to example embodiments may include a triphenylamine core, wherein a conjugated dendron having no heteroatoms is coupled to the triphenylamine core. An organic memory device according to example embodiments may include an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer according to example embodiments. A barrier layer may be provided between the first and second electrodes. A method of manufacturing the organic memory device according to example embodiments may include forming an organic active layer between a first electrode and a second electrode, the organic active layer including the dendrimer according to example embodiments.

Dendrimer with triphenylamine core, organic memory device having the same, and manufacturing method thereof

Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device.

Growing community of inventors

Seongnam-si, South Korea

Chulhee Kim