Samsung Display Co., Ltd.

Chul-Woo Shin

Kyung-Hun Yoon

A photo-detecting apparatus in which the time taken to read out a detection signal is decreased, and thus, a frame rate of the photo-detecting apparatus is improved. A photo-detecting pixel includes a photosensitive device for generating a first detection signal by photoelectrically converting incident light; a first transistor for generating a detection current by receiving the first detection signal generated by the photosensitive device via a gate terminal of the first transistor; a second transistor for forming a first current path with the first transistor, in response to a read signal input via a gate terminal of the second transistor; and a third transistor for delivering a voltage in accordance with the detection current to a data line, in response to a gate signal applied to a gate terminal of the third transistor.

Photo-detecting pixel, photo-detecting apparatus, and method of driving the photo-detecting apparatus

An X-ray detection device includes an X-ray detection panel having a plurality of gate-lines, a plurality of data-lines, a plurality of bias-lines, a plurality of pixel circuits, a gate driving circuit that sequentially provides a gate signal to the pixel circuits via the gate-lines when an X-ray detecting operation is performed, a readout integrated circuit that performs a readout operation of a detection signal that is output from the pixel circuits via the data-lines when the X-ray detecting operation is performed, a bias driving circuit that provides a forward-bias voltage or a reverse-bias voltage to the pixel circuits via the bias-lines, and an operation control circuit that controls a forward-biasing operation and an initializing operation to be simultaneously performed on the pixel circuits.

X-ray detection device and method of driving an X-ray detection panel

A thin film transistor (TFT) array substrate for an X-ray detector that improves a fill factor is disclosed. According to one aspect, the substrate includes a plurality of pixel areas each including a transistor area in which a TFT is formed, and a photodiode area in which a photodiode is formed. A first wire is formed in a first layer disposed in a lower portion of a photodiode layer in which the photodiode is formed, in at least a portion of the transistor area of the photodiode layer, and in a second layer disposed in an upper portion of the photodiode layer. A second wire, insulated from the first wire, extends in the pixel areas and is formed in the second layer. At least one TFT is formed in the transistor area and electrically connected to at least one of the first and second wires.

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Yongin, South Korea

Chul-Woo Shin