Korea Advanced Institute of Science and Technology

Korea Institute of Science and Technology

Chul Won Han

Suk Ki Min

Yong Jae Park

Young Ju Park

Kwang Bo Shim

A horizontal Bridgman single crystal growing apparatus using a direct monitoring electric furnace suitable for a single crystal growing of III-V, II-VI group compound semiconductor materials (InP, CdTe, etc.) including a gallium arsenide (GaAs). The apparatus is composed of: a heater wire being formed around a quartz tube for supporting, a cylindrical double quartz tube arranged with cooling water or gas inlet and outlet for circulation externally and coated with gold thin film on the internal wall surface thereof, thereby the high temperature heating over 1240.degree. C. is possible to obtain within a short period of time and also the cooling is possible, and whole process of the single crystal growing can be observed directly with naked eyes.

Single crystal growing apparatus and method

An apparatus for growing a single crystal of a semiconductor compound of Group III-V or Group II-VI such as GaAs, InP, or CdTe by using a horizontal zone melt technique. A direct monitoring furnace comprising a double quartz tube made of a transparent material is disposed in the high temperature section of the grower, thereby enabling the observation of the entire crystal growth procedure with the naked eye or with a CCD (charge coupled device) camera tube, enabling high-speed variation of temperature gradient as well as high-speed heating, and thus enabling the single crystal growth of GaAs with low defects and high uniformity, and thus enabling the single crystal growth of GaAs with low defects and high uniformity in the axial direction of growth. The direct monitoring furnace includes a sub-heater as well as a main heating wire, so that a spike zone can be formed, thereby enabling the manufacture of GaAs wafers with low defects and high uniformity.

Apparatus for growing a single crystal of a semiconductor compound by

A vertical gradient freeze single crystal growing apparatus utilizing a direct monitoring furnace which is possible to obtain rapid high temperature heating and uniform temperature distribution by using direct monitoring furnace as a higher temperature part furnace provided with double quartz tube applied with gold thin film, and also capable of observing entire process of single crystal growing directly by naked eye. The apparatus includes a direct monitoring furnace corresponding to higher temperature part furnace and lower temperature part furnace mounted on vertically standing guide rails so as to be moved upwardly and downwardly voluntarily thereon simultaneously or independently, and the direct monitoring furnace is provided with heater wires divided into more than two regions to inner side of protecting quartz tube provided within double quartz tube applied with gold thin film on its interior surface and formed with cooling water in and outlets and also crystal growing reaction tube capable of normal and reverse turning is provided thereto, and a number of thermocouples are provided to the furnaces.

Growing community of inventors

Seoul, South Korea

Chul Won Han