Samsung Electronics Co., Ltd.

Chul-Soo Kim

Young-Hyun Jun

Kyu-Hyoun Kim

Sang-Bo Lee

Sung-Min Seo

Jin-kyoung Jung

Sung-Hoon Kim

Seong-Jin Jang

Byung-Hoon Jeong

Ho-Young Song

Min-Sang Park

Doo-young Kim

Jin-Seok Kwak

Sang-Woong Shin

Soon-seob Lee

Gye-Hyun Kyung

A semiconductor memory device includes a plurality of memory cell array blocks, a bit line sense amplifier, a local sense amplifier that can be controlled to be turned on or off, a data sense amplifier, and a controller. The controller activates a local sense control signal for a predetermined duration in response to first and second signals. The first signal is a bit line sense enable signal that activates the bit line sense amplifier, and the local sense amplifier is activated for a predetermined duration after the bit line sense enable signal is activated. The second signal is activated or deactivated in phase with a column selection line signal that connects a pair of bit lines and a pair of local input/output lines. Accordingly, it is possible to turn on or off the local sense amplifier according to operating conditions, thereby increasing a tRCD parameter and reducing the consumption of current. The operating speed of the semiconductor memory device can be improved by combining the local sense amplifier with a current type data sense amplifier that does not require precharging and equalization during a read operation.

Semiconductor memory device having local sense amplifier with on/off control

A semiconductor device may include a control signal generator configured to generate a test control signal in response to an externally applied test command signal. First and second transmission gates may be configured to open and close together in response to a test clock signal pulse and the test control signal. A delay circuit may be coupled between the first and second transmission gates so that the delay circuit is configured to receive a test input signal through the first transmission gate and to transmit a delayed test input signal to the second transmission gate, and the delayed test input signal may correspond to the test input signal. A latch may be coupled between the second transmission gate and an output of the semiconductor device, and the latch may be configured to latch a first logic value when a duration of the test clock signal pulse is less than a delay of the delay circuit and to latch a second logic value when a duration of the test clock signal pulse is greater than the delay of the delay circuit, and the first and second logic values be different. Related methods are also discussed.

Semiconductor devices including test circuits and related methods of testing

Semiconductor memory devices, block select decoding circuits and a method of activating a word line are provided. An example semiconductor memory device may include a plurality of memory banks. Each of the plurality of memory banks may include memory blocks which may be arranged in different addressable orders. If two edge memory blocks are activated in a given one of the plurality of memory banks, a non-edge memory block may be concurrently activated in at least one of remaining memory banks other than the given one memory bank. Accordingly, a number of concurrently activated memory blocks, a voltage required to enable a word line and noise may be reduced. The example semiconductor device may include the example block select decoding circuit, and likewise may perform the example method of activating a word line with an activation of a reduced number of memory blocks.

Semiconductor memory devices, block select decoding circuits and method thereof

A semiconductor memory device includes a plurality of banks. A data path may be divided into a read data path and a write data path, therefore, parallel processing of write and read commands are possible. The semiconductor memory device may include an address bank buffer, address buffer, column predecoder and/or a decoder. The semiconductor memory device may begin execution of a write command in a bank in one clock cycle and begin execution of a read command in the following clock cycle, therefore, bus efficiency is increased and/or write-to-read turn around time is reduced.

Semiconductor memory device capable of reading and writing data at the same time

Provided are a buffer circuit and a memory system for selectively outputting a data strobe signal according to the number of data bits. The buffer circuit includes a first buffer unit, a second buffer unit, and a third buffer unit. The first buffer unit amplifies and outputs a first signal. The second buffer unit amplifies and outputs a second signal or outputs the first signal according to the logic level of a control signal. The third buffer unit amplifies the first signal to send or not to send the amplified first signal to the second buffer unit depending on the logic level of an inverted control signal. The logic levels of the control signal and the inverted control signal are determined according to the number of processed data bits. When the number of processed data bits is n, the control signal is set to a first level and the inverted control signal is set to a second level, and when the number of processed data bits is k, the control signal is set to a second level and the inverted control signal is set to a first level. Since the buffer circuit and the memory system selectively output the data strobe signal according to the number of data bits, a point of time when the data are latched can be advanced and a setup/hold time of the data can be reduced.

Buffer circuit and memory system for selectively outputting data strobe signal according to number of data bits

We describe and claim an internal signal replication device and method. A circuit comprising a selector to select one of a plurality of internally generated clock signals, and a compensation circuit to replicate the selected clock signal from a reference clock signal.

Internal signal replication device and method

Devices, circuits and methods synchronize the inputting and outputting of groups of data into a memory cell array and out of a device. Synchronizing is performed by internal clock signals, both of which are derived from a single delay feedback loop.

Semiconductor devices, circuits and methods for synchronizing the inputting and outputting data by internal clock signals derived from single feedback loop

Disclosed herein is a semiconductor memory device that includes a memory cell array and a plurality of pads for providing data to and from the memory cell array. A plurality of input/output line pairs corresponds to the plurality of pads. A reading means reads out the data from the memory cell array through the plurality of input/output line pairs and pads. A switch control circuit generates sequential switch control signals during a test mode. A switch control means receives the data from the reading means during the test mode. The switching means sequentially transfers the data to a representative pad responsive to the switch control signals. The present invention allows testing for defective memory cells at a wafer level using a limited number of probe needles.

Semiconductor memory device capable of accurately testing for defective memory cells at a wafer level

A clock supply device for distributing a source clock signal to memory elements in a synchronous memory system reduces skew and improves accuracy by transmitting a first clock signal from a synchronization section located at a first position to a clock distribution section located at a second position and then feeding back a second clock signal to the synchronization section which includes a phase locked loop or delay locked loop. The synchronization section locks the first signal with the source clock signal, thereby controlling the skew between the first clock signal and the source clock signal. The clock distributing section distributes the first clock signal to memory elements and generates the second clock signal as a feedback signal responsive to the first clock signal. The clock supply device includes a first transmission line for transmitting the first clock signal from the first position to the second position, and a second transmission line for transmitting the second clock signal back to the first position. A third transmission line is optionally provided to transmit the source clock signal from a clock generating section located at a third position to the synchronization section at the first position. The signal delay characteristics of the second and third transmission lines are preferably equal.

Method and apparatus for distributing a clock signal to synchronous

A test signal generator and method for testing a semiconductor wafer having a plurality of memory chips. A plurality of input buffers buffer test timing signals applied through a plurality of input terminals to the memory chips in test mode. A direct current source supplies a direct current of a given level to each of the terminals. The direct current source comprises a MOS transistor for supplying the direct current including a fuse with a first node connected between the terminal and buffer and a second node for receiving the direct current. The fuse is cut by an electric or laser cutter after wafer testing is complete. This enables a probe card for performing the wafer testing to be fabricated with a reduced number of probe tips, thereby overcoming the limitation of a test driver and allowing the simultaneous testing of semiconductor wafers having a plurality of memory chips having different pad configurations.

Test signal generator and method for testing a semiconductor wafer

Column select circuits and methods for read/write memory devices logically combine and delay an enable signal and a read/write control signal, to produce a column select control signal which has a first enable interval during a read operation and a second enable interval during a write operation. The first enable interval is preferably shorter than the second enable interval. The column select control signal preferably ends at the same time for both the read and write operations, but begins at different times for the read and write operations. Accordingly, the enable interval for the control signal can be different during read and write operations, to allow sufficient time for each of these operations while increasing access speed and preventing errors.

Growing community of inventors

Gyeonggi-do, South Korea

Chul-Soo Kim