Samsung Electronics Co., Ltd.

Chul-soo Kim

In-sang Song

Yun-kwon Park

Kuang-woo Nam

Duck-hwan Kim

Eun-seok Park

Seok-chul Yun

Sang-Chul Sul

Kuang-Woo Nam

Jea-Shik Shin

Sung-Hoon Kim

Byeoung-ju Ha

Dal Ahn

Hong-goo Yoon

Kwi-soo Kim

Sang-Wook Kwon

Kyu-Hyoun Kim

Moon-chul Lee

Young-Hyun Jun

Jong-seok Kim

Kyu-Dong Jung

Young-tack Hong

Hae-seok Park

Jong-Hyuk Kim

Ho-cheol Lee

Dong-ha Shim

Kook-hyun Sunwoo

Seok-Mo Chang

Young-ho Cho

Joung-yeal Kim

Jae-goo Lee

Kuk-jin Chun

Sang-Won Yun

Sang-chul Sul

Sung-Chan Kang

Jae-Shik Shin

A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed.

Multi-band filter module and electronic device comprising the same

A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.

Tunable resonator and tunable filter

Disclosed are a substrate level bonding method and a substrate level package formed thereby. The substrate level package includes a plurality of unit substrate sections, a base substrate, and a plurality of substrate adhesion sections. The unit substrate sections are separated from each other by holes. The base substrate is disposed to face the unit substrate sections. The substrate adhesion sections are interposed between the unit substrate sections and the base substrate to bond the unit substrate sections to the base substrate and which are formed of DFR material, whose at least one portion is uncured.

Substrate level bonding method and substrate level package

A phase shifter fabricated by a simple process and having a simple structure, a method of fabricating the same, and a duplexer having the same are disclosed. The duplexer includes a transmitting-end filter capable of passing only a signal in the range of a transmission frequency, a receiving-end filter capable of passing only a signal in the range of a reception frequency, and a phase shifter interposed between the transmitting-end filter and the receiving-end filter to isolate a transmitted signal of the transmitting-end filter and a received signal of the receiving-end filter from each other. The phase shifter includes a substrate provided with an input port and an output port, an inductor formed on the substrate and connected to the input and output ports, and a capacitor provided on the substrate, wherein the capacitor and inductor share a region of the substrate.

Phase shifter, method of fabricating the same, and duplexer having the same

A film bulk acoustic resonator (FBAR) filter and a duplexer are disclosed. At least one series resonator is positioned between an input port for inputting a frequency signal and an output port for outputting a frequency signal, at least two shunt resonators respectively positioned between the input and output ports and a ground, a first trimming inductor connects the at least two shunt resonators and the ground, and a second trimming inductor is positioned between the at least two shunt resonators.

Film bulk acoustic resonator filter and duplexer

A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

Tunable resonator using film bulk acoustic resonator (FBAR)

An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

Integrated device and fabricating method thereof

A multi-band filter module and a method of fabricating the same are provided. The multi-band filter module includes a piezoelectric substrate, a first filter provided on the piezoelectric substrate, and a second filter provided adjacent to the first filter on the piezoelectric substrate, and operating in a frequency band that is lower than that of the first filter.

Multi-band filter module and method of fabricating the same

A balun includes an input line for receiving an unbalanced signal, an output line for receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground. The input line and the output line are formed in the same layer, and the ground is formed in a different layer from the input line and the output line. The ground has an opening so as to generate a potential difference between the first output line and the second output line. The ground is electrically connected to the input line.

Balun

A duplexer is provided. The duplexer includes a first band pass filter (BPF) coupled to a first signal port and a second signal port; and a second BPF coupled to the first signal port and a third signal port, each of the first BPF and the second BPF including a first resonance circuit which comprises a plurality of first resonators coupled in series; a second resonance circuit which comprises a plurality of second resonators coupled in series; and a third resonance circuit which comprises a plurality of third resonators coupled in parallel and formed in divided lines coupling the first and second resonance circuits.

Duplexer

A multi-band filter module and a method of fabricating the same are disclosed. At least one upper filter is deposited on an upper surface of a first substrate. The first packaging substrate packages the upper filter deposited on the first substrate. At least one lower filter is deposited on an upper surface of the second substrate. The second packaging substrate packages the lower filter deposited on the second substrate. The lower surface of the first substrate is joined to a lower surface of the second substrate to face each other.

A balun capable of a reduced whole size. The balun includes an input line receiving an unbalanced signal, an output line receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground part. The input and output lines are formed on a layer, and the ground part is formed on a different layer from the layer. The ground part includes an opening and is electrically connected to the input line, and a portion of the ground part is removed to form the opening so that a potential difference occurs between first and second output lines. Thus, although a length of the output line is less than &#xbc; of an input wavelength &#x3bb;, a difference between phases of first and second output signals can be about 180&#xb0;. As a result, the whole size of the balun can be reduced.

An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

Integrated filter including FBAR and saw resonator and fabrication method therefor

A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

Monolithic duplexer and fabrication method thereof

A film bulk acoustic resonator includes a substrate; a lower electrode formed on top of the substrate; a piezoelectric membrane formed on top of the lower electrode and having a crystallographic axis so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode; and an upper electrode formed on top of the piezoelectric membrane.

Growing community of inventors

Hwaseong-si, South Korea

Chul-soo Kim