Samsung Electronics Co., Ltd.

Imperial Innovations Limited

Chul Joon Heo

Kyung Bae Park

Yong Wan Jin

Sung Young Yun

Gae Hwang Lee

Takkyun Ro

Sung Jun Park

Kwang Hee Lee

Taejin Choi

Seon-Jeong Lim

Dong-Seok Leem

Feifei Fang

Moon Gyu Han

Yeong Suk Choi

Tadao Yagi

Chul Baik

Ryuichi Satoh

Kiyohiko Tsutsumi

Dongseon Lee

Youn Hee Lim

Jisoo Shin

Ji Soo Shin

Hye Rim Hong

Hyeongju Kim

Jeong Il Park

Kyu Sik Kim

Hyesung Choi

Ohkyu Kwon

Xavier Bulliard

Norihito Ishii

Sang Mo Kim

Katsunori Shibata

Seok-Hwan Hong

Naotoshi Suganuma

Satoh Ryuichi

Jong Won Choi

Daiki Minami

Hwijoung Seo

Eun Kyung Lee

Takashi Okazaki

Sung Han Kim

Martin Heeney

Kyung-bae Park

Mineki Taoka

Don-Wook Lee

Hyun Bum Kang

Rie Sakurai

Hyeong-Ju Kim

Sungyoung Yun

Sakurai Rie

Ji-Seon Kim

Yang Han

Minwon Suh

Brett Baatz

Juhyung Lim

Tae Jin Choi

A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Sensor embedded display panel and electronic device

An imaging device includes a photoelectric conversion device including a sequential stack of an anode, a hole transport buffer layer, a photoelectric conversion layer, an electron transport buffer layer, and a cathode. The photoelectric conversion layer includes a p-type organic semiconductor and an n-type organic semiconductor. The electron transport buffer layer includes a compound represented by General Formula (1), and the p-type organic semiconductor includes a compound represented by General Formula (2): In General Formulas (1) and (2), Ar, Rto R, Ar, Rto R, Arand Ar, and Gand Gare as defined in the specification.

Imaging devices and imaging apparatuses

An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.

Organic photodiode, sensor, camera, and electronic device

An image sensor includes first and second organic photoelectric conversion devices stacked in a vertical direction and configured to selectively absorb light in a part of visible wavelength spectrum and non-selectively absorb light in the visible wavelength spectrum, respectively. The first organic photoelectric conversion device may selectively absorb light in a blue wavelength spectrum, and the second organic photoelectric conversion device may selectively absorb light in a green wavelength spectrum. The image sensor may have stacked organic photoelectric conversion devices configured to selectively absorb light in a red wavelength spectrum and a green wavelength spectrum, respectively.

Image sensors and image processing apparatus and electronic devices

A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Sensor-embedded display panel and electronic device

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

Disclosed are a photoelectric conversion device includes a first electrode and a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer including an organic buffer material, wherein a difference between a LUMO energy level of the organic buffer material and a LUMO energy level of the n-type semiconductor is greater than or equal to about 1.2 eV and the organic buffer material includes at least three carbazole moieties, and a sensor, and an electronic device including the same.

Photoelectric conversion device and sensor and electronic device

Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Photoelectric devices having charge transport layer including first charge transport material and second charge transport material and sensors and electronic devices

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound and photoelectric device, image sensor, and electronic device including the same

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ) of the first photoelectric conversion layer and a peak absorption wavelength (λ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Photoelectric devices and image sensors and electronic devices

An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Image sensors and electronic devices

An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Organic light emitting diode panels and display devices including the same

Growing community of inventors

Busan, South Korea

Chul Joon Heo