Samsung Electronics Co., Ltd.

Chul-Joon Choi

Sang-Bum Kim

Seong-Hyun Kim

Sang-Wook Kang

Ja-Hum Ku

Jong-Sang Choi

Seong-Jun Heo

Jun-Kyu Cho

Mahn-Ho Cho

Chul-Sung Kim

Dong-Ho Ahn

Sung-Hyun Kim

Joong-Chul Yoon

Jae-Yoon Yoo

Sug-hun Hong

A method and apparatus for resetting a memory card having a plurality of interfaces and a plurality of function blocks, wherein each function block may be associated with a corresponding interface, may include detecting a reset signal for a selected interface of the plurality of interfaces, and interrupting a function block associated with the selected interface. When the selected interface is the only active interface, all function blocks in the memory card may be reset. If interfaces other than the selected interface are active, only the selected interface may be reset.

Memory card having multiple interfaces and reset control method thereof

An electronic device includes a universal serial bus (USB) interface therein. This USB interface is configured to support at least first and second different USB interface standards. These different interface standards are selected by the electronic device in response to comparing a voltage level of a signal provided to said USB interface relative to a reference voltage generated within the electronic device. The signal provided to the USB may be a power supply signal, the first USB standard may be a USB 2.0 interface standard and the second USB standard may be an inter-chip USB interface standard.

Methods of operating electronic devices having USB interfaces capable of supporting multiple USB interface standards

Electronic device having USB interface capable of supporting multiple USB interface standards and methods of operating same

In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.

Method of forming a metal gate

The present invention includes a method of forming a metal gate electrode on which whiskers are not formed after performing a selective oxidation process and a subsequent heating process. The metal gate electrode is formed by forming a metal gate electrode pattern which is comprised of a polysilicon layer and a metal layer, and performing a selective oxidation process. After the selective oxidation process, the metal gate electrode undergoes a subsequent heating treatment. The selective oxidation process is carried out in a nitrogen containing gas ambient, so that a metal oxide layer is minimally formed on the metal layer. As a result, it is prevented from causing whiskers on the metal layer.

Method of forming a metal gate electrode

A method of forming a T-shaped isolation layer, a method of forming an elevated salicide source/drain region using the same, and a semiconductor device having the T-shaped isolation layer are provided. In the method of forming the T-shaped isolation layer, an isolation layer having a narrow trench region in the lower portion thereof and a wide trench region in the upper portion thereof is formed on a semiconductor substrate. Also, in the method of forming the elevated salicide source/drain region, the method of forming the T-shaped isolation layer is used. In particular, conductive impurities can also be implanted into the lower portion of the wide trench region which constitutes the head of the T-shaped isolation layer and is extended to both sides from the upper end of the narrow trench region by controlling the depth of the wide trench region in an ion implantation step for forming the source/drain region.

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Growing community of inventors

Gyeonggi-do, South Korea

Chul-Joon Choi