Samsung Electronics Co., Ltd.

Other

Lg Electronics Inc.

Lg Philips Lcd Co., Inc.

Gnc Co., Ltd

Chul Hong Park

Sun Jung Lee

Dong Soo Kim

Won Kyu Kim

Byung Sung Kim

Bong Jun Kim

Hye Young Lee

Yubo Qian

Young Gook Park

Kyeong Bum Choi

Hyeon Uk Kim

Kye Won Lee

Eun Joung Yoo

Shigenobu Maeda

Hyo Jin Kim

Jin Sung Kim

Ha-Young Kim

Jin Hong Kim

Sung Chul Park

Joong-Wan Park

Jae Seok Yang

Yuichi Hirano

Seong-ha Park

Jonghoon Lee

Deepak Sharma

Kwan Young Chun

Subhash Kuchanuri

Sung-won Kim

Sung Min Kang

In Wook Oh

Su Hyeon Kim

Sung Keun Park

Sung Wook Hwang

Ji Wook Kwon

Jun Young Jeon

Yoshinao Harada

Rajeev Ranjan

Su Hyeong Choi

Doo Hwan Park

Byung Ju Kang

Azmat Raheel

Seung-Jun Kim

Hai Jeong Shon

Eun Youp Kong

Seehyung Lee

Pan Jae Park

A semiconductor device includes a plurality of main contact plugs and a plurality of dummy contact plugs which pass through an insulating layer on a substrate. A plurality of upper interconnections is on the insulating layer. The plurality of dummy contact plugs include a first dummy contact plug. The plurality of upper interconnections include a first upper interconnection overlapping the first dummy contact plug. A vertical central axis of the first dummy contact plug is located outside the first upper interconnection.

Semiconductor device including dummy contact

A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.

Semiconductor device

Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.

Integrated circuit (IC) devices including cross gate contacts

A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.

Semiconductor devices

A layout design system, semiconductor device using the layout design system, and fabricating method thereof are provided. The fabricating method of a semiconductor device includes loading a first layout, wherein the first layout comprises a first active region and a first dummy region, and the first active region comprises a fin-type pattern design having a first width, generating a second layout by substituting the fin-type pattern design with a nanowire structure design and forming a nanowire structure by using the second layout, wherein the second layout comprises a second active region in the same size as the first active region, and a second dummy region in the same size as the first dummy region, the nanowire structure design has a second width greater than the first width, and the nanowire structure comprises a first nanowire extending in a first direction, a second nanowire extending in the first direction and being formed on the first nanowire at a spacing apart from the first nanowire, a gate electrode surrounding a periphery of the first nanowire and extending in a second direction of intersecting with the first direction, a gate spacer being formed on a sidewall of the gate electrode and comprising an inner sidewall and an outer sidewall facing each other, the inner sidewall of the gate spacer facing a side surface of the gate electrode, and a source/drain epitaxial layer on at least one side of the gate electrode and being connected to the first nanowire.

Layout design system, semiconductor device using the layout design system, and fabricating method thereof

A pattern wheel driver is provided. The pattern wheel driver includes a rotatable pattern wheel with patterned regions repeatedly formed on the pattern wheel. Each of the patterned regions has a plurality of patterns. Each of the plurality of patterns has a different width. The pattern wheel driver also includes a detector for detecting the plurality of patterns, mounted at a position where the patterned regions of the pattern wheel pass when the pattern wheel rotates. The pattern wheel driver also includes an encoder for producing a signal indicating whether the pattern wheel rotates in a forward direction or a reverse direction based on signals produced by the detector.

Wheel driver and portable electronic device having the same

Disclosed is an anti-fatigue and nutritious tonic agent containing powder of wild ginseng, optionally in admixture with a herb medicine, or water extract of the powder, which has remarkably enhanced anti-fatigue, and nutrition and tonic effects as compared with agents containing cultivated ginseng.

Anti-fatigue and tonic agent containing wild ginseng

Multi-chip memory devices include at least two integrated circuit memory chips, each of which includes corresponding address pads, data pads and control signal pads, and a common package that encapsulates the at least two integrated circuit memory chips, and that includes external terminals. An internal connection circuit in the common package is configured to connect at least one of the corresponding control signal pads of each of the integrated circuit memory chips to separate ones of the external terminals, to allow independent external control of each of the integrated circuit memory chips that are encapsulated in the common package. Multi-chip memory devices may be combined to form memory modules. The memory modules include a memory module substrate having first and second opposing surfaces. At least one multi-chip memory device, as described above, is provided on the first surface and on the second surface.

Multi-chip memory devices and modules including independent control of memory chips

An optical recording medium improves recording density at a simple structure by forming an optical reaction layer, which transmits a laser beam at a predetermined temperature, on or below of a recording layer.

Optical recording medium having optical reaction layer

The present invention discloses a backlight device for a liquid crystal display device, which includes a light source; a light waveguide plate having an end portion and a front portion; a lamp holder having a lamp reflector, the lamp holder surrounding most part of the light source, the lamp reflector reflecting a light to the end portion of the light waveguide plate; and a first prism sheet located on the front portion of the light waveguide plate, the prism sheet having a plurality of convex portions, the convex portions having an inclined line portion and a curved line portion, the inclined line portion having an predetermined angle with respect to a direction vertical to the front portion of the light waveguide plate.

Backlight device for a liquid crystal display device

Disclosed is a UV blocking and slimming cosmetic composition containing laminaria water extract, octylmethoxycinnamate and oxybenzone.

UV blocking and slimming cosmetic composition

Growing community of inventors

Seongnam-si, South Korea

Chul Hong Park