Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Iucf-hyu

Chul Ho Jung

Eun Joo Jang

Shin Ae Jun

Hyo Sook Jang

Hyun A Kang

Oul Cho

Soo Kyung Kwon

In Taek Han

Won Joo Lee

Jae-Goo Lee

Young-woo Park

Chang-Jin Kang

Chang-hyun Cho

Young Moo Lee

Chang-jin Kang

Sang Hoon Han

Hong-Sik Jeong

Chang-Won Choi

Chang-Hwan Lee

Ho Bum Park

Seok-woo Nam

Min-Seok Han

Bon-young Koo

Chan-Ouk Jung

Jun-yong Noh

Sang-Sup Jeong

A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1:&#x3c;().&#x2003;&#x2003;Equation 1

Film for backlight unit and backlight unit and liquid crystal display including same

A backlight unit for a liquid crystal display device including an light emitting diode light source; a light conversion layer disposed apart from the light emitting diode light source, wherein the light conversion layer is configured to convert light emitted from the light emitting diode light source to white light and provide the white light to a liquid crystal panel; and a light guide panel disposed between the light emitting diode light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, wherein the semiconductor nanocrystal is coated with a first polymer, and wherein the polymer matrix comprises a thermoplastic second polymer.

Backlight unit and liquid crystal display including same

Disclosed is a hollow fiber that includes a hollow positioned at the center of the hollow fiber, macropores positioned at adjacent to the hollow, and mesopores and picopores positioned at adjacent to macropores, and the picopores are three dimensionally connected to each other to form a three dimensional network structure. The hollow fiber includes a polymer derived from polyamic acid, and the polyamic acid includes a repeating unit obtained from aromatic diamine including at least one ortho-positioned functional group with respect to an amine group and dianhydride.

Hollow fiber, dope composition for forming hollow fiber, and method of preparing hollow fiber using the same

A semiconductor memory device and method of manufacturing a semiconductor memory device that prevents oxidation of the bit lines caused by misalignment which may occur when patterning a storage electrode. An oxidation preventing layer, such as a nitride layer, is formed over the bit lines or in the contact holes to eliminate the diffusion of oxygen into the bit line structure, thereby preventing oxidation of the bit lines.

Semiconductor memory device and method of manufacturing for preventing bit line oxidation

A temperature compensated crystal oscillator has a crystal oscillating unit and at least one part for temperature compensation and oscillation circuits. The temperature compensated crystal oscillator has a layered structure and a planar thin film resistor. The layered structure has an upper layer on which the crystal oscillator and the part are mounted, and at least one layer on which conduction patterns are formed. The planar thin film resistor is arranged on an upper surface of a bottom layer of the layered structure so as to adjust an output frequency of the temperature compensated crystal oscillator. Therefore, an area occupied by the resistor for adjusting the output frequency can be minimized by inserting the resistor between the layers.

Temperature compensated crystal oscillator and method for adjusting output frequency thereof

A self aligned contact pad in a semiconductor device and a method for forming the self aligned contact pad are disclosed. A bit line contact pad and a storage node contact pad are simultaneously formed by using a photoresist layer pattern having a T-shaped opening including at least two contact regions. An etch stopping layer is formed over a semiconductor substrate and over a transistor. An interlayer dielectric layer is then formed over the etch stopping layer. Next, the interlayer dielectric layer is planarized to have a planar top surface. A mask pattern having a T-shaped opening is then formed over the interlayer dielectric layer, exposing the active region and a portion of the inactive region. The interlayer dielectric layer and etch stopping layer are sequentially etched to reveal a top surface of the semiconductor substrate using the mask pattern, thereby forming a self aligned contact opening exposing a top surface of the semiconductor substrate. The mask pattern is then removed. A conductive layer is formed in the self aligned contact opening and over the interlayer dielectric layer. The conductive layer and the interlayer dielectric layer are planarization-etched to reveal a top surface of the gate mask, thereby forming at least two contact pads.

Method for forming a self aligned contact in a semiconductor device

Disclosed is an improved method for fabricating a DRAM cell capacitor which can prevent over-etching of polysilicon storage node. The method includes the steps of etching a first insulating layer on a semiconductor substrate to form a storage contact hole, filling the storage contact hole with a first conductive material to form a storage contact plug, forming a second insulating layer over the first insulating layer including the storage contact plug, forming a mask over the second insulating layer to define a storage node region, using the mask and etching the second and first insulating layers to form an opening therein to an upper surface of the storage contact plug, and filling the opening with a second conductive material to form a storage node.

Method for fabricating a DRAM cell capacitor including forming first

Growing community of inventors

Gwangju, South Korea

Chul Ho Jung