Lg Electronics Inc.

Goldstar, Co., Ltd.

Lg Semicon Co., Ltd.

Goldstar Electron Co., Ltd.

Chul H Kwon

Dong H Yun

Hyun Woo Shin

Hyeon S Park

Hyung Ki Hong

Sung Tae Kim

Kyuchung Lee

Kyu Chan Lee

Hyung-Ki Hong

Sung Hwa Lee

Kyeong Wook Heo

Young Ki Hong

Hai Sub Na

Jin Ho Choy

Kyu C Lee

Woo Suk Choi

Yang Su Han

There is provided a method for preparing an anatase type titanium dioxide photocatalyst having a particle size of nano level without a need of the sintering process at high temperature, and an anatase type titanium dioxide photocatalyst having a particle size nano level. The method for preparing an anatase type titanium dioxide photocatalyst having a particle size of nano level includes adding a titanium-based starting material to a selected solvent and adding an acid or base catalyst to the resulting aqueous solution. Next, subjecting the catalyst-containing aqueous solution to heat treatment at about 80&plusmn;20&deg; C. to activate peptization thereby preparing an anatase type titanium dioxide sol solution. Finally, the anatase type titanium dioxide sol solution is coated onto a support to complete the preparation of the photocatalyst.

Method for making anatase type titanium dioxide photocatalyst

A gas sensor and a method for fabricating the same includes a semiconductor substrate, a supporting layer formed on the semiconductor substrate, the supporting layer being electrically insulative and having a pattern groove formed therein, a heater formed in the pattern groove, an electrically insulating layer formed on the heater and the supporting layer, an electrode formed on the insulating layer, and a sensing layer formed on the electrode and the insulating layer to detect a target gas of interest according to a measured change in electrical conductivity or resistance thereof.

Gas sensor and method for fabricating same

Air pollution gas sensor which efficiently detects smell from smoking, ordinary stinks such as TMA and CH3SH, smell of Kimchi, acetaldehyde, and etc. and also a method for fabricating the same is revealed and described including a substrate, a heater formed on said substrate, electrodes each formed on said substrate insulated from the heater, and a sensing layer formed of SnO.sub.2, including WO.sub.3 on said substrate including said electrodes, with the method for fabricating the gas sensor including the steps of forming the heater on the substrate, forming the electrodes on the substrate insulated from the heater, and forming a sensing layer of SnO.sub.2 including WO.sub.3 on the substrate including the electrodes.

Gas sensor and method for fabricating the same

A gas sensing apparatus is disclosed including a gas sensing device that is self-heated due to an applied voltage, whose resistance variation amount is varied to thereby sense gas; a voltage supply for variably supplying a voltage to the gas sensing device; a current detector for detecting the current flowing through the gas sensing device thereby generating a current-voltage characteristic for the gas sensing apparatus under the effect of a given gas exposure; and a control and judgement portion for controlling the voltage supply to control a variation value of a voltage supplied to the gas sensing device and to determine the kind and density of a gas in an ambient atmosphere, using current-voltage characteristic reference data.

Gas sensing apparatus and method

A gas sensor for detecting a gas component from a food item includes a sensing layer having an electrical resistance value that varies in accordance with the concentration and type of the gas component generated from the food item to thereby sense the gas component, first and second electrodes coupled across the sensing layer and connected to a power supply, a heater for heating the gas sensor to a temperature of sensing operation, and a switch connected to an adjustable voltage supply for controlling whether the heater is operated in a first temperature range or in a second temperature range. The sensing layer includes a mixture of SnO.sub.2 and WO.sub.3 in a predetermined ratio.

Gas sensor for detecting gases generated from food products

A vegetable freshness sensor production method and a freshness keeping device using the sensor are disclosed. The sensor senses gases generated by vegetables, thus to not only sense freshness of the vegetables but also sense decayed state of the vegetables. The vegetable freshness keeping device appropriately controls temperature, pressure, humidity, O.sub.2 /CO.sub.2 and quantity of anion in the vegetable store room in accordance with sensing result of the sensor, thus to keep freshness of the vegetables for a long time. In order to produce the gas sensor, a mixture of a metal catalyst and a sensing material is calcinated and mixed with an organic vehicle, thus to form a paste. The paste is coated on an electrode surface of an alumina substrate, thus to form a sensing layer on the substrate. The substrate, after being sintered, is subjected to a wire bonding and to a packaging, thus to form the gas sensor.

Vegetable freshness keeping device having a sensor

A thin-film gas sensor and manufacturing method of the same is disclosed which includes a silicon substrate; an insulating layer formed on the surface of the silicon substrate; a heater formed in zigzag on the surface of said insulating layer; a temperature sensor formed in zigzag on the surface of the insulating layer in parallel with the heater; an interlayer insulating layer for electrically insulating the heater and temperature sensor formed on the insulating layer; a plurality of electrodes formed on the interlayer insulating layer placed between the heater and temperature sensor; a plurality of pairs of gas sensing layers disposed in an array on the electrodes and for reacting on detected gas; and a plurality of gas shielding layers formed on one gas sensing layer out of the pair of gas sensing layers and for shielding the detected gas so that the gas sensing layers do not react on the detected gas.

Gas sensor and manufacturing method of the same

This invention relates to a low power consumption type thin film gas sensor and method for fabricating the same. The gas sensor includes a silicon substrate having a window in the central part of one side thereof, masking material formed on the one side thereof except the window, a supporting film formed of an etch stop layer and a glass film on the other side of the substrate, heaters and temperature sensors arranged in parallel on the supporting film facing the window, an interlayer insulation film formed on the supporting film to cover the heaters and the temperature sensors, sensing film electrodes formed on the interlayer insulation film, and a sensing film formed on the interlayer insulation film so as to cover the sensing film electrodes for sensing a particular gas.

Low power consumption type thin film gas sensor

A method of preventing a no-load operation of a microwave oven. If a resistance of a gas sensor is greater than a first predetermined value, a cooking operation is normally performed. An initial signal value sensed by a temperature sensor is compared with a second predetermined value if the resistance of the gas sensor is smaller than or equal to the first predetermined value. If the initial signal value is greater than the second predetermined value, the initial signal value is compared with a signal value sensed by the temperature sensor after the lapse of a predetermined time period. If the initial signal value is greater than the sensed signal value, the cooking operation is normally performed. If the initial signal value is smaller than or equal to the sensed signal value, the present operation is discriminated as the no-load operation and the cooking operation is then stopped. A difference between the initial signal value and the sensed signal value is obtained if the initial signal value is smaller than or equal to the second predetermined value. The cooking operation is normally performed if the obtained value is smaller than or equal to a third predetermined value. If the obtained value is greater than the third predetermined value, the present operation is discriminated as the no-load operation.

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Seoul, South Korea

Chul H Kwon