Taiwan Semiconductor Manufacturing Comp. Ltd.

Chui-Ya Peng

Chih-Fen Chen

Sen-Yeo Peng

Bang-Yu Huang

Shin-Yeu Tsai

Yuh-Ta Fan

Yen Chuang

Kung-Wei Lee

Pin-Hen Lin

Ching Yu

Wei-Chun Hsu

Yeh-Hsun Fang

Shu-Yen Wang

Yung-Li Tsai

Wei-Hsiang Huang

Yu-Shao Cheng

Ying-Chieh Meng

Tsui-Wei Wang

Jia-Rong Xiao

Tsung-Ying Liu

Nai-Han Cheng

Chun-Yu Lee

Shih-Hao Lin

Chia-Hui Lin

Ching-Wen Chen

Yu-Wei Chang

Chun-Hsu Yen

Yi-Feng Chen

Ching-Yu Chen

Hsin-Lung Yang

Austin Hsu

Yan Cing Lin

Chih-Ta Kuan

A method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. The method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between an upper portion and a lower portion. The method further includes forming a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, and a difference between the first thickness and the second thickness is at most 10% of the second thickness.

Method of making polysilicon structure including protective layer

A system and method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

Systems and methods for in-situ Marangoni cleaning

A system includes a cooler, a concentration meter, a first pump and a second pump. The cooler is configured to cool first liquid by second liquid in the cooler. The concentration meter is configured to measure a concentration of the first liquid. The first pump is configured to move the first liquid according to the concentration. The second pump is coupled to the cooler, disposed with the first pump in a parallel manner, and configured to move the second liquid.

System and method for operating the same

In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

In an embodiment, a system includes: a wafer support configured to secure a wafer; a nozzle configured to dispense a liquid or a gas on the wafer when the nozzle is in an active state of dispensing; a shutter configured to catch the liquid from the nozzle when the shutter is in a first position below the nozzle; and a shutter actuator configured to: move the shutter to the first position in response to the nozzle not being in an inactive state; move the shutter to a second position away from the first position in response to the nozzle being in the active state.

Systems and methods for shuttered wafer cleaning

A semiconductor device includes a substrate, a first polysilicon structure over a first portion of the substrate, and a first spacer on a sidewall of the first polysilicon structure. The first spacer has a concave corner region between an upper portion and a lower portion. The semiconductor device includes a second polysilicon structure over a second portion of the substrate. The semiconductor device includes a second spacer on a sidewall of the second polysilicon structure. The semiconductor device further includes a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, a difference between the first thickness and the second thickness is at most 10% of the second thickness, and the protective layer exposes a top-most portion of a sidewall of the second spacer.

Polysilicon structure including protective layer

In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Automated wafer cleaning

A system includes a cleaning device and a concentration measuring device. The cleaning device includes a first pipe and a first pump. The first pump is configured to move first liquid in the first pipe. Two terminals of the first pump are respectively coupled to the first pipe. The concentration measuring device includes a tube, a cooler, a concentration meter and a second pump. The tube is coupled to the first pipe, and is configured to retrieve the first liquid. The cooler covers the tube to cool the first liquid. The concentration meter is configured to measure a concentration of the first liquid cooled by the cooler. The second pump is coupled to the tube, and is configured to move the first liquid according to the concentration.

In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d) above the at least one first trench. A first depth parameter (t) of the second depth (d) relative to the first depth (d) is determined. The processing temperature (T) is then determined based on the first depth parameter (t).

Method for calibrating temperature in chemical vapor deposition

An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.

Ion implanter toxic gas delivery system

A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

Semiconductor device and manufacturing method thereof

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

Growing community of inventors

Hsinchu, Taiwan

Chui-Ya Peng