Nan Ya Technology Corporation

Chui-Fu Chiu

Wen-Bin Wu

Jung-Chih Kuo

A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.

Overlay mark and method of forming the same

A mask overlay method, and a mask and a semiconductor device using the same are disclosed. According to the disclosed mask overlay technique, test marks and front layer overlay marks corresponding to a plurality of overlay mark designs are generated in a first layer of a semiconductor device. The test patterns generating the test marks each include a first sub pattern and a second sub pattern. Note that the first sub pattern has the same design as a front layer overlay pattern (which generates the front layer overlay mark corresponding thereto). Based on the test marks, performances of the plurality of overlay mark designs are graded. The front layer overlay mark corresponding to the overlay mark design having the best performance is regarded as an overlay reference for a mask of a second layer of the semiconductor device.

Mask overlay method, mask, and semiconductor device using the same

An integrated alignment and overlay mark includes a pre-layer pattern for reticle-to-wafer registration implemented in an exposure tool, and a current-layer pattern incorporated with the pre-layer pattern. The pre-layer pattern and the current-layer pattern constitute an overlay mark for determining registration accuracy between two patterned layers on a semiconductor wafer.

Integrated alignment and overlay mark

A mark for alignment and overlay, a mask having the same, and a method of using the same are provided. The mark includes a first mark pattern and a second mark pattern. The first mark pattern includes a first pattern and a second pattern, and the second mark pattern includes a third pattern and a fourth pattern. The first pattern includes a plurality of rectangular regions arranged in a first direction, and for each rectangular region, a sideline in a second direction is longer than a sideline in the first direction, wherein the first direction is perpendicular to the second direction. The second pattern is disposed on both sides of the first pattern in the second direction and includes a plurality of rectangular regions arranged in the second direction, and for each rectangular region, the sideline in the first direction is longer than a sideline in the second direction. The third pattern includes two rectangular regions disposed on both sides of the first pattern in the first direction, and the fourth pattern includes two rectangular regions disposed on both sides of the second pattern in the second direction.

Mark for alignment and overlay, mask having the same, and method of using the same

An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

Overlay mark

An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

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Taoyuan County, Taiwan

Chui-Fu Chiu