United Microelectronics Corp.

Chuen Huei Yang

Te-Hung Wu

Chia-Wei Huang

Sheng-Yuan Huang

Pei-Ru Tsai

Ming-Jui Chen

Chin-Lung Lin

Yung-Feng Cheng

Cheng-Te Wang

Yu-Shiang Yang

Hui-Fang Kuo

Ping-I Hsieh

Shih-Ming Kuo

Chih-Hao Wu

Venson Lee

Po-I Lee

Hsiang-Yun Huang

Lun-Hung Chen

A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.

Method to determine process window

A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.

Method for selectively amending layout patterns

A method of verifying a layout pattern comprises separately steps of obtaining a simulated pattern at a lower portion of a film by using a layout pattern as a mask to transfer the layout pattern to the film, and obtaining a simulated pattern at an upper portion of the film by using the layout pattern as a mask to transfer the layout pattern to the film. The layout pattern is verified according to the upper and lower simulated patterns.

Method of verifying a layout pattern

A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.

Lithography method

Scarf

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Taipei, Taiwan

Chuen Huei Yang