United Microelectronics Corp.

Chueh-Fei Tai

Chien-Ting Lin

Shih-Hung Tsai

Rai-Min Huang

Yu-Ruei Chen

Chung-Liang Chu

Ya-Huei Tsai

Po-Kuang Hsieh

Chih-Hsien Tang

Yu-Ting Tseng

Kuan-Hao Tseng

Cheng-Ping Kuo

A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

Layout pattern for magnetoresistive random access memory

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Method for fabricating semiconductor device

Growing community of inventors

Tainan, Taiwan

Chueh-Fei Tai