National Semiconductor Corporation

Chuck Huang

Chune-Sin Yeh

Low capacitance, low threshold voltage annular MOSFET transistors are disclosed. Both low junction capacitance and low threshold voltage are achieved without degradation of drain current due to application of back-bias to the substrate upon which the transistor is formed. A polysilicon annulus, rather than the drain region, abuts field oxide regions, thereby preventing junction capacitance at interface of field oxide and drain (or source). Annular MOSFETs can be fabricated using conventional CMOS processing technology.

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San Jose, CA, United States of America

Chuck Huang