Shin-etsu Chemical Co., Ltd.

Chuanwen Lin

Jun Hatakeyama

Takeshi Nagata

Masaki Ohashi

Tomohiro Kobayashi

Kazuhiro Katayama

Masahiro Fukushima

Kentaro Kumaki

Shun Kikuchi

A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.

Positive resist composition and patterning process

A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Chemically amplified resist composition and patterning process

A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodized aromatic ring bonded to the nitrogen atom via a C-Chydrocarbon group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Resist composition and patterning process

A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R&#x2014;COOC(CF)&#x2014;CHSORRRSwherein Ris a monovalent hydrocarbon group, R, Rand Rare an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.

Patterning process and resist composition

A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), Ris H, F, CHor CF, Z is a single bond, phenylene, naphthylene, or (backbone)-C(&#x2550;O)&#x2014;O&#x2014;Z'&#x2014;, Z&#x2032; is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), Rand Rare a monovalent hydrocarbon group, Ris a divalent hydrocarbon group, or Rand R, or Rand Rmay form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF, and k is an integer of 1 to 4. 

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Chuanwen Lin