Osaka University

Chuantong Chen

Katsuaki Suganuma

Zheng Zhang

Seungjun Noh

Toshiyuki Ishina

Chanyang Choe

A bonding member () includes surface-processed silver surfaces ().

Bonding member, method for producing bonding member and method for producing bonding structure

A bonding structure production method for producing a bonding structure () includes at least bonding a semiconductor element () and a substrate () using a silver paste. The substrate () includes a die attachment portion () to which the semiconductor element () is to be bonded. The die attachment portion () includes an alumina layer () serving as a surface layer on a bonding side of the die attachment portion () to which the semiconductor element () is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.

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Suita, Japan

Chuantong Chen