Bandwidth10, Inc.

Chuanshun Cao

Christopher Chase

Philip Worland

Carl V Ford

Carlos F R Mateus

Neelanjan Bandyopadhyay

Dalila Ellafi

Kai Hui

Michael Huang

A VCSEL system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions surrounded by one or more p-n junctions. The one or more active regions can include one or more tunnel junctions (TJ), and one or more apertures One or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's. Planar structures and or additional BTJ's, created during a regrowth process, are independent of a first growth process. The VCSEL has an HCG grading. The VCSEL includes a sacrificial layer.

HCG tunable VCSEL with integrated detector in the sacrificial layer

An (SOA) system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process, the VCSEL having an HCG grading. At least one of an ASIC and driver controller coupled to the VCSEL laser, the ASIC monitoring an output of a light pulse over wavelength.

HCG tunable VCSEL system with ASIC for processing information and firmware

A light emitting device has a first mirror; and one or more active regions with a first active region adjacent to the first mirror. Each of active region includes quantum wells and barriers, and is surrounded by one or more p-n junctions. The active regions have a selected shape structure each with a tunnel junction (TJ). One or more apertures are provided with the selected shape structure; one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's, created during a regrowth process that is independent of a first growth process of the first mirror as well as the active region and the one or more TJs. One or more electrical confinement apertures are defined by the one or more BTJ's, additional TJ's, planar structures and/or additional BTJ's. A vertical resonator cavity is disposed over the electrical confinement aperture. A high contrast grating (HCG) operates as a second mirror positioned over the vertical resonator cavity. The HCG is configured to reflect a first portion of light back into the vertical resonator cavity, and a second portion of the light as an output beam from the VCSEL. The HCG structure is layered on the selected shape structure. A shape of the output beam of the light emitting device is determined by a geometric shape of the one or more BTJ apertures, apertures for additional TJ's, planar structures and/or additional BTJ's, with a transmission function of the HCG. The shape is designed according to the desired optical transmission function of the application.

Light emitting device with determinable shape of output beam

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Berkeley, CA, United States of America

Chuanshun Cao