Gpower Semiconductor, Inc.

Chuanjia Wu

Yi Pei

Yuan Li

The semiconductor device includes: a substrate; a semiconductor layer disposed on one side of the substrate, the semiconductor layer including a channel layer and a barrier layer, and a two-dimensional electron gas being formed at an interface between the channel layer and the barrier layer; a source, a gate, and a drain disposed on one side of the semiconductor layer away from the substrate; and at least two drain junction terminals located on the side of the semiconductor layer away from the substrate and disposed at intervals between the gate and the drain, the at least two drain junction terminals being electrically connected to the drain respectively. In the embodiments of the present application, the on-resistance of the device can be reduced while the current collapse phenomenon is eliminated, thereby improving the long-term reliability of the device.

Semiconductor device and method for manufacturing the same

The present disclosure discloses a power semiconductor device and a method for manufacturing the same. The power semiconductor device comprises: a substrate, a channel layer, a barrier layer, a source electrode, a drain electrode, a gate electrode, and a junction termination structure located on the barrier layer. The power semiconductor device extends in a first direction from an edge of a side of the gate electrode close to the drain electrode to the drain electrode, the junction termination structure at least comprises a first region close to the gate electrode and a second region away from the gate electrode and the thickness of the first region is greater than that of the second region in a second direction perpendicular to the barrier layer. The junction termination structure can effectively improve the distribution of an electric field of the barrier layer and hence increase the breakdown voltage of the device.

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Suzhou, China

Chuanjia Wu