Skymedi Corporation

Global Unichip Corporation

Chuang Cheng

Fuja Shone

Wen-Lin Chang

Cheng-Wen Wu

Chih-Tsun Huang

Chih-Wei Tsai

Fu-Ja Shone

Yu-Shuen Tang

Yung Li Ji

Shih Chieh Tai

Jing-Reng Huang

Chin-Jung Su

Kai-Hsun Lin

Ting Wei Chen

Chih Wei Tsai

Chih Cheng Tu

Hsingho Liu

Satashi Sugawa

Ching-Chang Chen

Satoshi Sugawa

A time-sharing buffer access system manages a buffer among plural master devices. Plural buffer handling units are operable to associatively couple the master devices, respectively, and a first end of each buffer handling unit is used to independently transfer data to or from the associated master device. A second end of each buffer handling unit is coupled to a buffer switch. A time slot controller defines a time slot, during which one of the buffer handling units is selected by the buffer switch such that data are only transferred between the selected buffer handling unit and the buffer.

Time-sharing buffer access system

A configurable coding system and method of multiple error correcting codes (ECCs) for a memory device or devices are disclosed. The system includes an ECC codec that selectively performs different error corrections with different parameters. The system also includes means for providing a selected parameter to the ECC codec for initializing the ECC codec. The parameter used for initializing the ECC codec is an error-free parameter.

Configurable coding system and method of multiple ECCS

A method and apparatus of generating the soft value for a memory device is disclosed. Memory read-related parameters are set, and data are read out of the memory device according to the set parameters. The data reading is performed for pre-determined plural iterations, thereby obtaining the soft value according to the read-out data and the set parameters.

Method and apparatus of generating a soft value for a memory device

A non-volatile memory storage device has a non-volatile memory, e.g., a flash memory, and a controller coupled to the non-volatile memory. The controller comprises a plurality of control circuits and an arbitration circuit. Each control circuit is configured to generate a request to update the chip-enable (CE) signals for non-volatile memory, and the arbitration circuit is configured to determine when the requests are acknowledged. The arbitration circuit generates acknowledge signals to the control circuits when all of the requests of the control circuits have been received by the arbitration circuit. The CE signals for non-volatile memory are updated when requests are acknowledged.

Non-volatile memory storage device and operation method thereof

A non-volatile memory system and a method for reading data therefrom are provided. The data comprises a first sub-data and a second sub-data. The non-volatile memory system comprises a first storage unit and a second storage unit, adapted for storing the two sub-data respectively. The first storage unit reads a first command from the controller, and stores the first sub-data temporarily as the first temporary sub-data according to the first command. The second storage unit reads a second command from the controller, and stores the second sub-data temporarily as the second temporary sub-data according to the second command. The first temporary sub-data is read from the first storage unit. Then, the first storage unit reads a third command from the controller. The second temporary sub-data is also read from the second storage unit while reading the third command. The time for reading data from the non-volatile memory system is reduced.

Non-volatile memory system and method for reading and storing sub-data during partially overlapping periods

A method and related system for programming connections between a NAND flash memory controller and a plurality of NAND flash memory modules includes the NAND flash memory controller generating a switch signal and a swap signal according to a condition of one of the plurality of NAND flash memory modules, a remap module selectively coupling the plurality of NAND flash memory modules to the NAND flash memory controller according to the switch signal, and a swap module selectively coupling the plurality of NAND flash memory modules to the NAND flash memory controller according to the swap signal.

NAND flash memory system with programmable connections between a NAND flash memory controller and a plurality of NAND flash memory modules and method thereof

A test pattern generation and comparison circuit creates test pattern stimulus signals for and evaluates response signals from logic or memory such as random access memory (RAM). It utilizes both parallel and serial interfaces to the logic/memory under test. The test pattern generation and comparison circuit further provides a method for testing logic and memory utilizing built-in self test (BIST) techniques. The method uses a programmable logic/memory commands which are translated into physical logic signals and timings for the logic or memory under test. The results of the test pattern generated and applied to the logic or memory are compared to expected results. The result of the comparison is a pass/fail designation. In addition, the comparison of the expected test results with the actual test results provides information on the exact location of the failure. Also, since the test pattern generation and comparison circuit architecture is compatible with hardware description languages such as Verilog HDL or VHDL, the test pattern generation and comparison circuit can be automatically generated with a silicon compiler.

Test pattern generator for SRAM and DRAM

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Hsinchu, Taiwan

Chuang Cheng