Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Chuanbao Luo

Jiangbo Yao

Macai Lu

Dai Tian

A thin film transistor array substrate and a display panel are provided. The array substrate includes a substrate, a first metal layer, a first buffer layer, a second metal layer, a second buffer layer, an active layer, a gate insulating layer, a third metal layer, a passivation layer, and a fourth metal layer. By arranging the fourth metal layer on the passivation layer, an influence of water vapor in the environment on the array substrate is blocked, thereby improving a product yield and a reliability of the display panel.

Thin film transistor array substrate and display panel

A display device and a manufacturing method thereof are provided. The display device includes a substrate, a switching thin film transistor, and a driving thin film transistor. The switching thin film transistor includes a first gate, a first active layer, a first source, and a first drain disposed on the substrate, wherein the first source and the first drain are disposed on a side of the first active layer away from the substrate. The driving thin film transistor includes a second source, a second drain, a second active layer, and a second gate disposed on the substrate, wherein the second active layer is positioned on a side of the second source and the second drain away from the substrate.

Display device and manufacturing method thereof

The present disclosure provides a hybrid display device. The hybrid display device includes: a driving backplane defined with an undercut groove; and a light-emitting structure layer including a first electrode layer, a common cathode, light-emitting elements, and first light-emitting units; the first electrode layer is electrically connected to a driving circuit layer; the first electrode layer includes first anodes, auxiliary cathodes, and second anodes, the undercut groove is adjacent to the first anodes, the common cathode is disconnected at the undercut groove, and a gap is defined between the common cathode and the first anodes.

Hybrid display device, manufacturing method of hybrid display device, and display terminal

A driving substrate includes a substrate, a source electrode, a drain electrode, an active layer, and a gate electrode. The source electrode and the drain electrode are disposed on the substrate. There is a first space between the source electrode and the drain electrode. The active layer is disposed on the substrate, the source electrode, and the drain electrode, and includes a channel, a source region, and a drain region. The source region covers at least part of the source electrode. The drain region covers at least part of the drain electrode. The channel corresponds to the first space. The gate electrode is disposed on a side of the active layer away from the source electrode and the drain electrode, and is disposed corresponding to the active layer. A method is used for fabricating the driving substrate. A display panel includes the driving substrate.

Driving substrate, method for fabricating same, and display panel

The present application provides a display panel and a manufacturing method thereof, wherein a projection of a light-absorbing layer in the display panel on a base substrate covers a projection of a gap between a first electrode and a second electrode on the base substrate, so as to absorb ambient light directly or indirectly irradiated on a channel region through the gap between a first electrode and a second electrode, so that the channel region on a first metal layer is well protected, which greatly reduces the problem of performance degradation of the channel region of an active layer caused by irradiation of the external ambient light.

Display panel including light-absorbing layer

The application provides a driver board and a display panel; the driver board comprises a substrate, a metal oxide semiconductor active layer, a gate layer, and a first protective layer; the gate layer is arranged on the side of the metal oxide semiconductor active layer away from the substrate, the first protective layer covers the gate layer, the material of the first protective layer is metal oxide semiconductor, and the oxygen content of the first protective layer is greater than the oxygen content of the metal oxide semiconductor active layer. The first protective layer in the driver board of the present application could block water vapor in the environment, so as to improve the transistor performance.

Driver board, display panel

An array substrate and a manufacturing method thereof, and a display panel are disclosed. The array substrate includes a substrate, a switching transistor, and a driving transistor. The switching transistor and the driving transistor are disposed on the substrate. An orthogonal projection of the switching transistor on the substrate is staggered from an orthogonal projection of the driving transistor on the substrate. A mobility of the switching transistor is greater than a mobility of the driving transistor, and a threshold voltage of the driving transistor is less than a threshold voltage of the switching transistor.

Array substrate and manufacturing method thereof and display panel

The present invention provides an array substrate and a display panel. The array substrate includes: an underlay; a source electrode and drain electrode disposed on underlay; a light shielding portion disposed on underlay; an active layer correspondingly disposed on the source electrode, the drain electrode, and the light shielding portion. The active layer includes a channel region, and the light shielding portion is disposed to correspond to the channel region. The present invention reduces processes and lowers cost by disposing the source electrode, the drain electrode, and the light shielding portion in a same layer such that the source electrode, the drain electrode, and the light shielding portion are simultaneously formed with a same material by a same process.

Array substrate and manufacturing method thereof, display panel

A display panel, a manufacturing method thereof, and a display device are provided. Through a configuration of a capacitor in the display panel, where the capacitor is connected to a first thin film transistor, a photosensitive pattern in the capacitor senses light, such that when the light varies, a varying charge quantity of the photosensitive pattern in the capacitor varies current of the first thin film transistor, increasing a sensitometric characteristic of the first thin film transistor, and increasing fingerprint recognition effect, and a second gate is configured to be a capacitor polar plate, decreasing a thickness of an array substrate.

Display panel, manufacturing method thereof, and display device

A display panel and a method for manufacturing the same are provided. The display panel comprises a thin film transistor array substrate, a storage capacitor, and a light-emitting element, wherein the thin film transistor array substrate comprises a driving thin film transistor and a switching thin film transistor, the driving thin film transistor and the switching thin film transistor are electrically connected, the driving thin film transistor and the light-emitting element are electrically connected, and the storage capacitor comprises a conductive portion of a first active layer of the switching thin film transistor and an anode of the light-emitting element.

Display panel including storage capacitor and method for manufacturing same

A method for manufacturing an array substrate and a array substrate are provided. The method includes steps of sequentially forming a first metal structure layer, an insulating layer, a semiconductor layer, and a second metal structure layer on the substrate. The first metal thin film layer and the second metal thin film layer are etched with an electrolyte solution to form a patterned second metal structure layer. The patterned second metal structure layer includes a source and a drain.

Method for manufacturing array substrate and array substrate

A thin film transistor (TFT) device, a manufacturing method thereof, and a TFT array substrate are provided. A light-shielding layer is provided with a barrier layer for preventing copper ions in a metal layer from diffusing into a buffer layer and an active layer. The barrier layer is also provided with an etch barrier layer for preventing the copper ions of the metal layer being oxidized by a fluorine-based oxidizing gas due to the fluorine-based oxidizing gas is used to dry etch the buffer layer for forming a signal via hole, so as to improve a performance stability of the TFT device. A source is electrically connected to the light-shielding layer through the signal via hole to eliminate a threshold voltage drift of the TFT.

TFT device, manufacturing method thereof, and TFT array substrate

The present disclosure provides an array substrate and a manufacturing method thereof, and a display panel. In the array substrate, a functional layer disposed between an active layer and a gate insulating layer protects the active layer during etching of the active layer, which prevents the active layer from damage and conducts a source/drain layer and the active layer, so that transistors in the array substrate work normally, solving the technical problem that current display panels damage the active layer during a preparation process, which causes performance of thin film transistors to decrease.

Array substrate and manufacturing method thereof, and display panel

A thin film transistor is provided. The thin film transistor includes an active layer, and the active layer includes a plurality of stacked structures, and each of the stacked structures includes: a N-layer indium oxidation layer; a gallium oxidation layer, the gallium oxidation layer is provided on the indium oxidation layer of the N-layer indium oxidation layer; and a zinc oxidation layer is provided on the gallium oxidation layer. These stacked structures improve the performance of the thin film transistor. A preparation method of the thin film transistor and a display panel containing the thin film transistor is also provided.

Method of manufacturing a thin film transistor

A manufacturing method of a TFT array substrate is provided, comprising: depositing and forming a gate and a gate scanning line; depositing sequentially a gate insulating layer, an active layer and a second metal layer; depositing and forming a first photoresist layer and a second photoresist layer on the second metal layer; first photoresist layer comprising a first-stage photoresist layer, second-stage photoresist layer and third-stage photoresist layer with increasing thickness, the first-stage photoresist layer being in the middle of the first photoresist layer and a channel being formed; ashing to remove first-stage photoresist layer, forming a source and a drain by etching; and ashing to remove the second-stage photoresist layer, and then depositing a passivation layer as a whole; stripping third-stage photoresist layer and second photoresist layer, depositing and forming a pixel electrode and a common electrode.

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Guangdong, China

Chuanbao Luo