Applied Materials, Inc.

Chuan Ying Wang

Xinhai Han

Deenesh Padhi

Hang Yu

Daemian Raj Benjamin Raj

Chuanxi Yang

Kesong Hu

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Jian Li

Yue Chen

Zheng John Ye

Nagarajan Rajagopalan

Zhijun Jiang

Sanjay G Kamath

Masaki Ogata

Shailendra Srivastava

Hidehiro Kojiri

Nikhil Sudhindrarao Jorapur

Allison Yau

Wenjiao Wang

Vu Ngoc Tran Nguyen

Kristopher R Enslow

Arkajit Roy Barman

Alok Jain

Mitesh Sanghvi

Joshua Maher

Miguel S Fung

Thian Choi Lim

SeoYoung Lee

Venkatanarayana Shankarmurthy

Yulian Yao

Phaik Lynn Leong

Jose Angelo Olave

Grace Qi En Teong

Yu Yang

An electronic device manufacturing system capable of obtaining metrology data associated with a deposition process performed on a substrate according to a process recipe, wherein the deposition process generates a plurality of layers on a surface of the substrate. The manufacturing system can further obtain an expected profile associate with the process recipe, wherein the expected profile comprises a plurality of values indicative of a desired thickness for a plurality of layers of the process recipe. The manufacturing system can further generate a correction profile based on the metrology data and the expected profile, wherein the correction profile comprises a deposition time offset value for at least one layer of the plurality of layers. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe and cause a deposition step to be performed on the substrate according to the updated process recipe.

Methods and mechanisms for adjusting film deposition parameters during substrate manufacturing

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Modified stacks for 3D NAND

Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

Systems and methods for depositing high density and high tensile stress films

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500&#xb0; C. and a voltage of greater than or about 600 V.

Semiconductor substrate supports with improved high temperature chucking

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Method of forming film stacks with reduced defects

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Sunnyvale, CA, United States of America

Chuan Ying Wang